|
|
PDF 2N6428A Data sheet ( Hoja de datos )
| Número de pieza | 2N6428A | |
| Descripción | NPN Epitaxial Silicon Transistor | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2N6428A (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
2N6428A
NPN Epitaxial Silicon Transistor
Features
• This device is designed for high gain, general purpose
amplifier applications at collector currents from 1uA to 200 mA.
December 2006
tm
TO92
1 23
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
60
VCEO
Collector-Emitter Voltage
50
VEBO
Emitter-Base Voltage
5
IC Collector Current - Continuous
200
PD Total Device Dissipation
625
TJ Junction Temperature
150
TSTG
Storage Temperature Range
- 55 ~ 150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics* TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE (sat)
VBE (on)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 100µA, IE = 0
IC = 1mA, IB = 0
IE = 100µA, IC = 0
VCB = 30V, IE = 0
VBE = 5V, IC = 0
VCE = 5V, IC = 0.01mA
VCE = 5V, IC = 0.1mA
VCE = 5V, IC = 1.0mA
VCE = 5V, IC = 10mA
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
VCE = 5V, IC = 1.0mA
fT
Current Gain Bandwidth Product
IC = 1mA, VCE = 5.0V, f = 100MHz
Cob Output Capacitance
VCB = 10V, IE = 0, f = 1MHz
* DC Item are tested by Pulse Test: Pulse Width≤300us, Duty Cycle≤2%
Min.
60
50
5
250
250
250
250
0.2
0.6
0.56
100
Max.
10
10
650
650
0.66
700
3
Units
V
V
V
nA
nA
V
V
V
MHz
pF
©2006 Fairchild Semiconductor Corporation
2N6428A Rev. A
1
www.fairchildsemi.com
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N6428A.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2N6428 | NPN EPITAXIAL SILICON TRANSISTOR |  Samsung semiconductor |
| 2N6428 | Trans GP BJT NPN 50V 0.2A 3-Pin TO-92 Sleeve |  New Jersey Semiconductor |
| 2N6428A | NPN EPITAXIAL SILICON TRANSISTOR | Samsung semiconductor |
| 2N6428A | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |