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PDF 2PD2150 Data sheet ( Hoja de datos )
| Número de pieza | 2PD2150 | |
| Descripción | NPN low VCEsat transistor | |
| Fabricantes | NXP Semiconductors | |
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2PD2150
20 V, 3 A NPN low VCEsat (BISS) transistor
Rev. 01 — 22 April 2005
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/
TO-243) SMD plastic package.
PNP complement: 2PB1424.
1.2 Features
s Low collector-emitter saturation voltage VCEsat
s High collector current capability: IC and ICM
s High collector current gain (hFE) at high IC
s High efficiency due to less heat generation
s Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
s DC-to-DC conversion
s MOSFET gate driving
s Motor control
s Charging circuits
s Power switches (e.g. motors, fans)
s Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1:
Symbol
VCEO
ICM
hFE
Quick reference data
Parameter
collector-emitter voltage
peak collector current
DC current gain
Conditions
open base
single pulse;
tp ≤ 1 ms
VCE = 2 V;
IC = 0.1 A
Min Typ Max Unit
- - 20 V
- - 3A
180 -
390
1 page  
Philips Semiconductors
2PD2150
20 V, 3 A NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
IEBO
collector-base cut-off
current
emitter-base cut-off
current
VCB = 30 V; IE = 0 A
VCB = 30 V; IE = 0 A;
Tj = 150 °C
VEB = 5 V; IC = 0 A
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = 2 V; IC = 0.1 A
IC = 2 A; IB = 100 mA
VBEon
fT
base-emitter turn-on
voltage
transition frequency
VCE = 10 V; IC = 5 mA
VCE = 1 V; IC = 1 A
IC = 500 mA; VCE = 2 V;
f = 100 MHz
Cc collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Min Typ Max Unit
- - 0.1 µA
- - 10 µA
- - 0.1 µA
180 -
--
390
0.5 V
[1] - - 0.7 V
[1] - - 1 V
- 220 -
MHz
- 20 -
pF
9397 750 14987
Product data sheet
Rev. 01 — 22 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
5 of 11
5 Page 
Philips Semiconductors
17. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Packing information. . . . . . . . . . . . . . . . . . . . . . 7
10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
11 Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10
14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
16 Contact information . . . . . . . . . . . . . . . . . . . . 10
2PD2150
20 V, 3 A NPN low VCEsat (BISS) transistor
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 22 April 2005
Document number: 9397 750 14987
Published in The Netherlands
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet 2PD2150.PDF ] | |
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