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Número de pieza | RJU002N06 | |
Descripción | 2.5V Drive Nch MOS FET | |
Fabricantes | ROHM Semiconductor | |
Logotipo | ||
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Transistors
2.5V Drive Nch MOS FET
RJU002N06
RJU002N06
zStructure
Silicon N-channel MOS FET
zFeatures
1) Low On-resistance.
2) Low voltage drive (2.5V drive).
zApplications
Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RJU002N06
Taping
T106
3000
zExternal dimensions (Unit : mm)
UMT3
2.0
0.3
(3)
0.9
0.2 0.7
(1) Source
(2) Gate
(3) Drain
(2) (1)
0.65 0.65
1.3
0.15
Each lead has same dimensions
Abbreviated symbol : ML
zInner circuit
(3)
(2) ∗2
∗1
∗1 ESD PROTECTION DIODE (1)
∗2 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
Symbol
VDSS
VGSS
ID
IDP ∗1
PD ∗2
Tch
Tstg
Limits
60
±12
±200
±800
200
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ Each terminal mounted on a recommended land
Symbol
Rth(ch-a) ∗
Limits
625
Unit
V
V
mA
mA
mW
°C
°C
Unit
°C/W
(1) Source
(2) Gate
(3) Drain
1/2
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet RJU002N06.PDF ] |
Número de pieza | Descripción | Fabricantes |
RJU002N06 | 2.5V Drive Nch MOS FET | ROHM Semiconductor |
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