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PDF FJY4011R Data sheet ( Hoja de datos )

Número de pieza FJY4011R
Descripción PNP Epitaxial Silicon Transistor
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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FJY4011R
PNP Epitaxial Silicon Transistor
Features
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R=22K)
• Complement to FJY3011R
November 2006
tm
C
E
B
SOT - 523F
C
S61
BE
Eqivalent Circuit
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
TSTG
Storage Temperature Range
TJ Junction Temperature
PC Collector Power Dissipation, by RθJA
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Value
-40
-40
-5
-100
-55~150
150
200
Thermal Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
RθJA
Thermal Resistance, Junction to Ambient
* Minimum land pad size.
Max
600
Electrical Characteristics* TC = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
V(BR)CBO
Collector-Emitter Breakdown Voltage IC = -100 uA, IE = 0
V(BR)CEO
Collector-Base Breakdown Voltage
IC = -1mA, IB = 0
ICBO Collector-Cutoff Current
VCB = -30 V, IE = 0
hFE DC Current Gain
VCE = -5 V, IC = -1 mA
VCE(sat)
Collector-Emitter Saturation Voltage IC = -10 mA, IB = -1 mA
fT
Current Gain - Bandwidth Product
VCE = -10V, IC =- 5 mA
Ccb Output Capacitance
VCB = -10 V, IE = 0, f = 1.0 MHz
R Input Resistor
* Pulse Test: PW300µs, Duty Cycle2%
MIN
-40
-40
100
15
Units
V
V
V
mA
°C
°C
mW
Units
°C/W
Typ MAX
-0.1
600
-0.3
200
5.5
22 29
Units
V
V
uA
V
MHz
pF
K
©2006 Fairchild Semiconductor Corporation
FJY4011R Rev. A
1
www.fairchildsemi.com

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