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PDF HN58X2408 Data sheet ( Hoja de datos )
| Número de pieza | HN58X2408 | |
| Descripción | (HN58X2402 - HN58X2464) Two-wire serial interface 2k / 4k / 8k / 16k / 32k / 64k EEPROM | |
| Fabricantes | Hitachi Semiconductor | |
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HN58X2402/HN58X2404/HN58X2408
HN58X2416/HN58X2432/HN58X2464
Two-wire serial interface
2k EEPROM (256-word × 8-bit)
4k EEPROM (512-word × 8-bit)
8k EEPROM (1-kword × 8-bit)/16k EEPROM (2-kword × 8-bit)
32k EEPROM (4-kword × 8-bit)/64k EEPROM(8-kword × 8-bit)
ADE-203-882B (Z)
Rev. 1.0
Jan. 25, 1999
Description
HN58X24xx series are two-wire serial interface EEPROM (Electrically Erasable and Programmable
ROM). They realize high speed, low power consumption and a high level of reliability by employing
advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They also
have a 32-byte page programming function to make their write operation faster.
Features
• Single supply: 1.8 V to 5.5 V
• Two-wire serial interface (I2CTM serial bus*1)
• Clock frequency: 400 kHz
• Power dissipation:
Standby: 3 µA(max)
Active (Read): 1 mA(max)
Active (Write): 3 mA(max)
• Automatic page write: 32-byte/page
• Write cycle time: 10 ms (2.7 V to 5.5 V )/15ms (1.8 V to 2.7 V )
1 page  
HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464
DC Operating Conditions
Parameter
Symbol
Supply voltage
Input high voltage
Input low voltage
Operating temperature
VCC
VSS
VIH
VIL
Topr
Notes: 1. VIL (min): –1.0 V for pulse width ≤ 50 ns.
Min
1.8
0
VCC × 0.7
–0.3*1
0
Typ
—
0
—
—
—
Max
5.5
0
VCC + 1.0
VCC × 0.3
70
Unit
V
V
V
V
˚C
DC Characteristics (Ta = 0 to +70˚C, VCC = 1.8 V to 5.5 V)
Parameter
Symbol Min Typ Max Unit Test conditions
Input leakage current
I LI
— — 2.0 µA VCC = 5.5 V, Vin = 0 to 5.5 V
Output leakage current ILO
— — 2.0 µA VCC = 5.5 V, Vout = 0 to 5.5 V
Standby VCC current
I SB
— 1.0 3.0 µA Vin = VSS or VCC
Read VCC current
ICC1 — — 1.0 mA VCC = 5.5 V, Read at 400 kHz
Write VCC current
ICC2 — — 3.0 mA VCC = 5.5 V, Write at 400 kHz
Output low voltage
VOL2 — — 0.4 V
VCC = 4.5 to 5.5 V, IOL = 1.6 mA
VCC = 2.7 to 4.5 V, IOL = 0.8 mA
VCC = 1.8 to 2.7 V, IOL = 0.4 mA
VOL1 — — 0.2 V
VCC = 1.8 to 2.7 V, IOL = 0.2 mA
Capacitance (Ta = 25˚C, f = 1 MHz)
Parameter
Symbol Min
Test
Typ Max Unit conditions
Input capacitance (A0 to A2, SCL, WP) Cin*1
—
—
6.0 pF Vin = 0 V
Output capacitance (SDA)
CI/O* 1
—
—
Note: 1. This parameter is sampled and not 100% tested.
6.0 pF
Vout = 0 V
5
5 Page 
HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464
Acknowledge Timing Waveform
SCL
SDA IN
SDA OUT
12
89
Acknowledge
out
Device Addressing
The EEPROM device requires an 8-bit device address word following a start condition to enable the chip
for a read or a write operation. The device address word consists of 4-bit device code, 3-bit device address
code and 1-bit read/write(R/W) code. The most significant 4-bit of the device address word are used to
distinguish device type and this EEPROM uses “1010” fixed code. The device address word is followed by
the 3-bit device address code in the order of A2, A1, A0. The device address code selects one device out of
all devices which are connected to the bus. This means that the device is selected if the inputted 3-bit
device address code is equal to the corresponding hard-wired A2-A0 pin status. As for the 4kbit, 8kbit and
16kbit EEPROMs, whole or some bits of their device address code may be used as the memory address
bits. For example, A0 is used as a8 of memory address for the 4kbit, A0 and A1 are used as a8 and a9 for
the 8kbit. The 16kbit doesn't use the device address code instead all 3 bits are used as the memory address
bits a8, a9 and a10. The eighth bit of the device address word is the read/write(R/W) bit. A write operation
is initiated if this bit is low and a read operation is initiated if this bit is high. Upon a compare of the device
address word, the EEPROM enters the read or write operation after outputting the zero as an acknowledge.
The EEPROM turns to a stand-by state if the device code is not “1010” or device address code doesn’t
coincide with status of the correspond hard-wired device address pins A0 to A2.
Device Address Word
Device address word (8-bit)
Device code (fixed)
Device address code*1
2k, 32k, 64k 1 0 1 0 A2
A1
4k
1 0 1 0 A2
A1
8k
1 0 1 0 A2
a9
16k 1 0 1 0 a10 a9
Notes: 1. A2 to A0 are device address and a10 to a8 are memory address.
2. R/W=“1” is read and R/W = “0” is write.
A0
a8
a8
a8
R/W code*2
R/W
R/W
R/W
R/W
11
11 Page | ||
| Páginas | Total 21 Páginas | |
| PDF Descargar | [ Datasheet HN58X2408.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HN58X2402 | (HN58X2402 - HN58X2464) Two-wire serial interface 2k / 4k / 8k / 16k / 32k / 64k EEPROM | Hitachi Semiconductor |
| HN58X2402SFPI | Two-wire serial interface (2k EEPROM 256-word x 8-bit) 4k EEPROM (512-word x 8-bit) | Hitachi Semiconductor |
| HN58X2402SI | Two-wire serial interface (2k EEPROM 256-word x 8-bit) 4k EEPROM (512-word x 8-bit) | Hitachi Semiconductor |
| HN58X2402STI | Two-wire serial interface (2k EEPROM 256-word x 8-bit) 4k EEPROM (512-word x 8-bit) | Hitachi Semiconductor |
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