(PDF) SEP8506 Datasheet - GaAs Infrared Emitting Diode

Número de pieza	SEP8506
Descripción	GaAs Infrared Emitting Diode
Fabricantes	Honeywell
Logotipo
Hay una vista previa y un enlace de descarga de SEP8506 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas
No Preview Available ! www.DataSheet4U.com SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50¡ (nominal) beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger DESCRIPTION The SEP8506 is a gallium arsenide infrared emitting diode molded in a side-emitting red plastic package. The chip is positioned to emit radiation through a plastic lens from the side of the package. INFRA-20.TIF OUTLINE DIMENSIONS in inches (mm) Tolerance 3 plc decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51) DIM_071.ds4 h Honeywell reserves the right to make 40 changes in order to improve design and supply the best products possible. 1 page

Páginas	Total 4 Páginas
PDF Descargar	[ Datasheet SEP8506.PDF ]

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

PDF SEP8506 Data sheet ( Hoja de datos )