|
|
Numéro de référence | RDS035L03 | ||
Description | Switching | ||
Fabricant | ROHM Semiconductor | ||
Logo | |||
1 Page
www.DataSheet4U.com
Transistors
Switching (30V, 3.5A)
RDS035L03
RDS035L03
zFeatures
1) Low Qg.
2) Low on-resistance.
3) Exellent resistance to damage from static electricity.
zApplication
Switching
zStructure
Silicon N-channel
MOS FET
zEquivalent circuit
(8) (7)
(6) (5)
(8) (7) (6) (5)
zExternal dimensions (Units : mm)
Max.1.75
(5) (4)
(8) (1)
36..90−+−+00.1.35
0.15
1.5−+0.1
0.5−+0.1
ROHM : SOP8
Each lead has same dimensions
(1) (2) (3) (4)
∗
(1) (2)
(3)
∗Gate Protection Diode.
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
∗ (4) Tr2 Gate
(5) Tr2 Drain
(4) (6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗ A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed
voltage are exceeded.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Reverse Drain
Current
Continuous
Pulsed
Source Current
(Body Diode)
Continuous
Pulsed
Total Power Dissipation(Tc=25˚C)
Channel Temperature
Storage Temperature
∗ Pw≤10ms, Duty cycle≤1%
Symbol
VDSS
VGSS
ID
IDP∗
IDR
IDRP∗
Is
Isp∗
PD
Tch
Tstg
Limits
30
±20
3.5
14
3.5
14
1.3
5.2
2
150
−55∼+150
Unit
V
V
A
A
A
A
A
A
W
˚C
˚C
|
|||
Pages | Pages 4 | ||
Télécharger | [ RDS035L03 ] |
No | Description détaillée | Fabricant |
RDS035L03 | Switching | ROHM Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |