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ROHM Semiconductor - Switching

Numéro de référence RDS035L03
Description Switching
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RDS035L03 fiche technique
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Transistors
Switching (30V, 3.5A)
RDS035L03
RDS035L03
zFeatures
1) Low Qg.
2) Low on-resistance.
3) Exellent resistance to damage from static electricity.
zApplication
Switching
zStructure
Silicon N-channel
MOS FET
zEquivalent circuit
(8) (7)
(6) (5)
(8) (7) (6) (5)
zExternal dimensions (Units : mm)
Max.1.75
(5) (4)
(8) (1)
36..90−+−+00.1.35
0.15
1.5−+0.1
0.5−+0.1
ROHM : SOP8
Each lead has same dimensions
(1) (2) (3) (4)
(1) (2)
(3)
Gate Protection Diode.
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(4) (6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed
voltage are exceeded.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Reverse Drain
Current
Continuous
Pulsed
Source Current
(Body Diode)
Continuous
Pulsed
Total Power Dissipation(Tc=25˚C)
Channel Temperature
Storage Temperature
Pw10ms, Duty cycle1%
Symbol
VDSS
VGSS
ID
IDP
IDR
IDRP
Is
Isp
PD
Tch
Tstg
Limits
30
±20
3.5
14
3.5
14
1.3
5.2
2
150
55∼+150
Unit
V
V
A
A
A
A
A
A
W
˚C
˚C

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