DataSheetWiki


DMN601WK fiches techniques PDF

Diodes Incorporated - N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Numéro de référence DMN601WK
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Fabricant Diodes Incorporated 
Logo Diodes Incorporated 





1 Page

No Preview Available !





DMN601WK fiche technique
www.DataSheet4U.com
Lead-free Green
DMN601WK
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
Low On-Resistance: RDS(ON)
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected Up To 2kV
"Green" Device (Note 4)
A
D
BC
GS
G
H
Mechanical Data
KM
Case: SOT-323
J
DE
L
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Drain
Moisture sensitivity: Level 1 per J-STD-020C
Terminals: Finish Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking: See Last Page
Ordering & Date Code Information: See Last Page
Weight: 0.006 grams (approximate)
Gate
Gate
Protection
Diode
ESD protected up to 2kV
Source
EQUIVALENT CIRCUIT
SOT-323
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
α 0° 8°
All Dimensions in mm
Maximum Ratings @ TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Continuous
Pulsed (Note 3)
Symbol
VDSS
VGSS
ID
Pd
RθJA
Tj, TSTG
Value
60
±20
300
800
200
625
-65 to +150
Note:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width 10µS, Duty Cycle 1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Units
V
V
mA
mW
°C/W
°C
DS30653 Rev. 2 - 2
1 of 4
www.diodes.com
DMN601WK
© Diodes Incorporated

PagesPages 4
Télécharger [ DMN601WK ]


Fiche technique recommandé

No Description détaillée Fabricant
DMN601WK N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Diodes Incorporated
Diodes Incorporated
DMN601WKQ N-CHANNEL ENHANCEMENT MODE MOSFET Diodes
Diodes

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche