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ALPHA - Silicon Schottky Diode Chips

Numéro de référence CDB76xx-000
Description Silicon Schottky Diode Chips
Fabricant ALPHA 
Logo ALPHA 





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CDB76xx-000 fiche technique
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Silicon Schottky Diode Chips
Features
I For Detector and Mixer Applications
I Low Capacitance for Usage Beyond 40 GHz
I ZBD and Low Barrier Designs
I P-Type and N-Type Junctions
I Large Bond Pad Chip Design
Description
Alpha’s product line of silicon Schottky diode chips are
intended for use as detector and mixer devices in hybrid
integrated circuits at frequencies from below 100 MHz to
higher than 40 GHz. Alpha’s “Universal Chip” design
features a 4 mil diameter bond pad that is offset from the
semiconductor junction preventing damage to the active
junction as a result of wire bonding.
As power-sensing detectors, these Schottky diode chips
all have the same voltage sensitivity so long as the output
video impedance is much higher than the video
resistance of the diode. Figure 1 shows the expected
detected voltage sensitivity as a function of RF source
impedance in an untuned circuit. Note that sensitivity is
substantially increased by transforming the source
impedance from 50 to higher values. Maximum
sensitivity occurs when the source impedance equals the
video resistance.
In a detector circuit operating at zero bias, depending on
the video load impedance, a ZBD device with RV less than
10 kmay be more sensitive than a low barrier diode with
RV greater than 100 k. Applying forward bias reduces
the diode video resistance as shown in Figure 2. Lower
video resistance also increases the video bandwidth but
does not increase voltage sensitivity, as shown in
Figure 3. Biased Schottky diodes have better temperature
stability and also may be used in temperature
compensated detector circuits.
P-type Schottky diodes generate lower 1/F noise and are
preferred for Doppler mixers and biased detector
applications. The bond pad for the P-type Schottky diode
is the cathode. N-type Schottky diodes have lower parasitic
resistance, RS, and will perform with lower conversion loss
in mixer circuits. The bond pad for the N-type Schottky
diode is the anode.
Electrical Specifications at 25°C
Part Number
Barrier
Junction
Type
CJ1
(pF)
Max.
CDC7630-000
ZBD
P
0.25
CDC7631-000
ZBD
P
0.15
CDB7619-000
Low
P
0.10
CDB7620-000
Low
P
0.15
CDF7621-000
Low
N
0.10
CDF7623-000
Low
N
0.30
1. CJ for low barrier diodes specified at 0 V. CJ for ZBDs specified at 0.15 V
reverse bias.
2. RT is the slope resistance at 10 mA. RS Max. may be calculated from:
RS = RT - 2.6 x N.
3. VB for low barrier diodes is specified at 10 µA. VB for ZBDs is specified
at 100 µA.
RT2
()
Max.
30
80
40
30
20
10
VF @ 1 mA
(mV)
Min.–Max.
135–240
150–300
275–375
250–350
270–350
240–300
VB3
(V)
Min.
1
2
2
2
2
2
RV @ Zero Bias
(k)
Typ.
5.5
7.2
735
537
680
245
Outline
Drawing
526-006
526-006
526-006
526-006
526-011
526-011
Alpha Industries, Inc. [781] 935-5150 Fax [617] 824-4579 Email [email protected] www.alphaind.com
Specifications subject to change without notice. 8/01A
1

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