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Numéro de référence | QST6 | ||
Description | Low frequency amplifier | ||
Fabricant | ROHM Semiconductor | ||
Logo | |||
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Transistors
Low frequency amplifier
QST6
QST6
!Application
Low frequency amplifier
Driver
!Features
1) A collector current is large.
2) VCE(sat) <= − 180mV
At I C = −1A / IB = − 50mA
!External dimensions (Units : mm)
2.8
1.6
Each lead has same dimensions
Abbreviated symbol : T06
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
Emitter-base voltage
VCEO
VEBO
Collector current
IC
ICP
Power dissipation
Junction temperature
PC
Tj
Range of storage temperature Tstg
∗1Single pulse, PW=1ms
∗2Each Termminal Mounted on a Recommended
Limits
−15
−12
−6
−2
−4
500
150
−55~+150
Unit
V
V
V
A
A∗1
mW∗2
°C
°C
!Equivalent circuit
(6) (5)
(4)
(1) (2)
(3)
!Electrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗ Pulsed
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
−15
−12
−6
−
−
−
270
−
−
Typ.
−
−
−
−
−
−100
−
360
15
Max.
−
−
−
−100
−100
−180
680
−
−
Unit
V
V
V
nA
nA
mV
−
MHz
pF
Conditions
IC=−10µA
IC=−1mA
IE=−10µA
VCB=−15V
VEB=−6V
IC=−1A, IB=−50mA
VCE=−2V, IC=−200mA ∗
VCE=−2V, IE=200mA, f=100MHz ∗
VCB=−10V, IE=0A, f=1MHz
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Pages | Pages 2 | ||
Télécharger | [ QST6 ] |
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