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Numéro de référence | QST4 | ||
Description | Low frequency amplifier | ||
Fabricant | ROHM Semiconductor | ||
Logo | |||
1 Page
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Transistors
Low frequency amplifier
QST4
QST4
zApplication
Low frequency amplifier
Driver
zFeatures
1) A collector current is large.
2) VCE(sat) : max. −250mV
At IC=−1.5A / IB=−30mA
zExternal dimensions (Unit : mm)
2.8
1.6
Each lead has same dimensions
ROHM : TSMT6
QST4
Abbreviated symbol : T04
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Collector-base voltage
VCBO
−15
Collector-emitter voltage
Emitter-base voltage
VCEO
VEBO
−12
−6
Collector current
IC −3
ICP −6
Power dissipation
Junction temperature
PC 500
1.25
Tj 150
Range of storage temperature Tstg −55 to +150
∗1Single pulse, PW=1ms
∗2Each Termminal Mounted on a Recommended
∗3 Mounted on a 25mm×25mm× t 0.8mm Ceramic substrate
Unit
V
V
V
A
A∗1
mW∗2
W ∗3
°C
°C
zEquivalent circuit
(6) (5)
(4)
(1) (2)
(3)
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗ Pulsed
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
−15 − − V IC=−10µA
−12 − − V IC=−1mA
−6 − − V IE=−10µA
− − −100 nA VCB=−15V
− − −100 nA VEB=−6V
− −120 −250 mV IC=−1.5A, IB=−30mA
270 − 680 − VCE=−2V, IC=−500mA ∗
− 280 − MHz VCE=−2V, IE=500mA, f=100MHz ∗
− 30 − pF VCB=−10V, IE=0A, f=1MHz
Rev.C
1/2
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Pages | Pages 3 | ||
Télécharger | [ QST4 ] |
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