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Numéro de référence | P6503NJ | ||
Description | N&P-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | Niko | ||
Logo | |||
NIKO-SEM
www.DataSheet4U.com
N- & P-Channel Enhancement Mode
Field Effect Transistor
PRODUCT SUMMARY
V(BR)DSS RDS(ON)
N-Channel 30 65m
P-Channel -30 150m
ID
4A
-3A
P6503NJ
TSOPJW-8
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 70 °C
Power Dissipation
TC = 25 °C
TC = 70 °C
Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VDS
VGS
ID
IDM
PD
Tj, Tstg
TL
N-Channel P-Channel UNITS
30 -30 V
±20 ±20 V
4 -3
3 -2 A
10 -10
2
W
1.3
-55 to 150
275
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle ≤ 1%
TYPICAL
MAXIMUM
110
UNITS
°C / W
1 JUL-08-2004
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Pages | Pages 8 | ||
Télécharger | [ P6503NJ ] |
No | Description détaillée | Fabricant |
P6503NJ | N&P-Channel Enhancement Mode Field Effect Transistor | Niko |
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