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PDF NCP580 Data sheet ( Hoja de datos )

Número de pieza NCP580
Descripción CMOS LDO Regulator
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo



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No Preview Available ! NCP580 Hoja de datos, Descripción, Manual

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NCP580
Ultra−Fast, Low Noise
120 mA CMOS LDO
Regulator with Enable
The NCP580 series of low dropout regulators are designed for
portable battery powered applications which require precise output
voltage accuracy, low quiescent current, and high ripple rejection.
These devices feature an enable function which lowers current
consumption significantly and are offered in the small SC−82AB
package.
A 2.2 mF ceramic capacitor or higher is the recommended value to
be used with these devices on the output pin.
Features
Ultra−Low Dropout Voltage of 150 mV at 100 mA
Low Output Noise of 30 mVrms without Noise Reduction Cap
Excellent Line Regulation of 0.02%/V
Excellent Load Regulation of 12 mV
High Output Voltage Accuracy of "1.5%
Low Iq Current of 90 mA
Very Low Shutdown Current of 0.1 mA
Excellent Power Supply Rejection Ratio of 70 dB at f = 1.0 kHz
Wide Output Voltage Range of 1.5 V to 3.3 V
Fold Back Protection Circuit
Fast Dynamic Performance
Low Temperature Drift Coefficient on the Output Voltage of
"100 ppm/°C
Input Voltage up to 6.5 V
These are Pb−Free Devices
Typical Applications
Portable Equipment
Hand−Held Instrumentation
Camcorders and Cameras
http://onsemi.com
MARKING
DIAGRAM
4
1
SC−82AB
SQ SUFFIX
CASE 419C
1
xxx M G
G
xxx = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
Vin Vout
+
Vref
Current Limit
CE
GND
Figure 1. Simplified Block Diagram
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 2
1
Publication Order Number:
NCP580/D

1 page




NCP580 pdf
NCP580
TYPICAL CHARACTERISTICS
90
Iout = 1.0 mA
80
70
60 Iout = 30 mA Iout = 50 mA
50
40
30
20
10
Vin = 2.5 Vdc + 0.5 Vp−p
Cout = Ceramic 2.2 mF
0
0.1 1
Vout = 1.5 V
10 100
FREQUENCY, f (kHz)
Figure 14. Ripple Rejection vs. Frequency
90 Iout = 1.0 mA
80
70
60 Iout = 30 mA Iout = 50 mA
50
40
30
20
10
Vin = 3.8 Vdc + 0.5 Vp−p
Cout = Ceramic 2.2 mF
0
0.1 1
Vout = 2.8 V
10 100
FREQUENCY, f (kHz)
Figure 15. Ripple Rejection vs. Frequency
http://onsemi.com
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