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IRFS4229PBF fiches techniques PDF

International Rectifier - PDP SWITCH

Numéro de référence IRFS4229PBF
Description PDP SWITCH
Fabricant International Rectifier 
Logo International Rectifier 





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IRFS4229PBF fiche technique
www.DataSheet4U.com
PD - 97080
PDP SWITCH
IRFS4229PbF
Features
l Advanced Process Technology
l Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
l Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
l Low QG for Fast Response
l High Repetitive Peak Current Capability for
Reliable Operation
l Short Fall & Rise Times for Fast Switching
l175°C Operating Junction Temperature for
Improved Ruggedness
l Repetitive Avalanche Capability for Robustness
and Reliability
Key Parameters
VDS min
250
VDS (Avalanche) typ.
300
RDS(ON) typ. @ 10V
42
IRP max @ TC= 100°C
91
TJ max
175
DD
V
V
m:
A
°C
G
S
S
D
G
D2Pak
GDS
Gate
Drain
Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
IRP @ TC = 100°C
PD @TC = 25°C
PD @TC = 100°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
gRepetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
fRθJC
Junction-to-Case
fRθJA Junction-to-Ambient
Max.
±30
45
32
180
91
330
190
2.2
-40 to + 175
300
x x10lb in (1.1N m)
Typ.
–––
–––
Max.
0.45*
62
Units
V
A
W
W/°C
°C
N
Units
* RθJC (end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes  through … are on page 9
www.irf.com
1
04/12/06

PagesPages 9
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