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Numéro de référence | HFA60MC60C | ||
Description | Soft Recovery Diode | ||
Fabricant | International Rectifier | ||
Logo | |||
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PD -2.463 rev. B 03/99
HEXFREDTM
Features
Reduced RFI and EMI
Reduced Snubbing
Extensive Characterization of
Recovery Parameters
HFA60MC60C
Ultrafast, Soft Recovery Diode
(ISOLATED BASE)
12 3
ANODE COMMON ANODE
1 CATHODE
2
VR = 600V
VF(typ.) = 1.1V
IF(AV) = 60A
Qrr (typ.) = 200nC
IRRM(typ.) = 6A
trr(typ.) = 30ns
di(rec)M/dt (typ.) = 170A/µs
Description
HEXFREDTMdiodes are optimized to reduce losses and EMI/RFI in high frequency
power conditioning systems. An extensive characterization of the recovery
behavior for different values of current, temperature and di/dt simplifies the
calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are
ideally suited for power converters, motors drives and other applications where
switching losses are significant portion of the total losses.
TO-249AA
Absolute Maximum Ratings (per Leg)
VR
IF @ TC = 25°C
IF @ TC = 100°C
IFSM
EAS
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Continuous Forward Current
Single Pulse Forward Current
Non-Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
600
50
24
200
220
125
50
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
µJ
W
°C
Thermal - Mechanical Characteristics
Parameter
RθJC
Junction-to-Case, Single Leg Conducting
Junction-to-Case, Both Legs Conducting
RθCS
Wt
Case-to-Sink, Flat, Greased Surface
Weight
Mounting Torque
Note: Limited by junction temperature
L = 100µH, duty cycle limited by max TJ
125°C
Min.
35 (4.0)
Typ.
0.10
58 (2.0)
Max.
1.0
0.50
50 (5.7)
Units
°C/W
K/W
g (oz)
lbfin
(Nm)
1
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Pages | Pages 5 | ||
Télécharger | [ HFA60MC60C ] |
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