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PDF FDB2710 Data sheet ( Hoja de datos )
| Número de pieza | FDB2710 | |
| Descripción | N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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www.DataSheet4U.com
November 2006
FDB2710
250V N-Channel PowerTrench MOSFET
tm
General Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• PDP application
Description
• 50A, 250V, RDS(on) = 36.3mΩ @VGS = 10 V
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low RDS(on)
• High power and current handling capability
DD
GS
Absolute Maximum Ratings
Symbol
VDS
VGS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Gate-Source voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA*
Thermal Resistance, Junction-to-Ambient*
RθJA
Thermal Resistance, Junction-to-Ambient
*When mounted on the minimum pad size recommended (PCB Mount)
©2006 Fairchild Semiconductor Corporation
FDB2710 Rev. A
1
G
S
Ratings
250
± 30
50
31.3
See Figure 9
145
4.5
260
2.1
-55 to +150
300
Unit
V
V
A
A
A
mJ
V/ns
W
W/°C
°C
°C
Min
--
--
--
Max
0.48
40
62.5
Unit
°C/W
°C/W
°C/W
www.fairchildsemi.com
1 page  
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDB2710 Rev. A
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDB2710.PDF ] | |
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