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Honeywell - AlGaAs Infrared Emitting Diode

Numéro de référence SE3470
Description AlGaAs Infrared Emitting Diode
Fabricant Honeywell 
Logo Honeywell 





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SE3470 fiche technique
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SE3470/5470
AlGaAs Infrared Emitting Diode
FEATURES
TO-46 metal can package
Choice of flat window or lensed package
90¡ or 20¡ (nominal) beam angle option
880 nm wavelength
Higher output power than GaAs at equivalent
drive currents
Wide operating temperature range
(- 55¡C to +125¡C)
Ideal for high pulsed current applications
Mechanically and spectrally matched to
SD3421/5421 photodiode,
SD3443/5443/5491phototransistor,
SD3410/5410 photodarlington and SD5600
series Schmitt trigger
DESCRIPTION
The SE3470/5470 series consists of aluminum gallium
arsenide infrared emitting diode mounted in a TO-46
metal can package. The SE3470 series has flat window
cans providing a wide beam angle, while the SE5470
series has glass lensed cans providing a narrow beam
angle. These devices typically exhibit 70% greater
power output than gallium arsenide devices at the same
forward current. The TO-46 packages offer high power
dissipation capability and are ideally suited for operation
in hostile environments.
INFRA-83.TIF
OUTLINE DIMENSIONS in inches (mm)
Tolerance 3 plc decimals ±0.005(0.12)
2 plc decimals ±0.020(0.51)
SE3470
.219 (5.56) DIA.
.208 (5.28)
.188 (4.77) DIA.
.178 (4.52)
.500
(12.70)
MIN.
45°
.046(1.17)
.036(.91)
.100(2.54)DIA
1 NOM
.160 (4.06) DIA.
.137 (3.48)
.015
(0.36)
.153 (3.89)
.140 (3.56)
.048(1.22)
.028(.71)
2
.018
DIA.
(.460)
LEADS:
1. CATHODE (TAB)
2. ANODE (CASE)
DIM_005a.ds4
SE5470
.219 (5.56) DIA.
.208 (5.28)
.188 (4.77) DIA.
.178 (4.52)
.500
(12.70)
MIN.
45°
.046(1.17)
.036(.91)
.100(2.54)DIA
1 NOM
.160 (4.06) DIA.
.137 (3.48)
.247 (6.27)
.224 (5.89)
DIM_005b.ds4
.015
(0.36)
.200
5.08
.048(1.22)
.028(.71)
2
.018
DIA.
(.460)
LEADS:
1. CATHODE (TAB)
2. ANODE (CASE)
h Honeywell reserves the right to make
32 changes in order to improve design and
supply the best products possible.

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