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PDF RD09MUP2 Data sheet ( Hoja de datos )
| Número de pieza | RD09MUP2 | |
| Descripción | Silicon MOSFET Power Transistor | |
| Fabricantes | Mitsubishi Electric | |
| Logotipo |  |
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD09MUP2
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
DESCRIPTION
RD09MUP2 is a MOS FET type transistor
specifically designed for UHF RF power
amplifiers applications.
8.0+/-0.2
(d)
0.2+/-0.05
(b)
7.0+/-0.2
(a)
(b)
FEATURES
•High power gain:
(4.5)
0.95+/-0.2
2.6+/-0.2
Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz
•High Efficiency: 50%min. (520MHz)
•Integrated gate protection diode
INDEX MARK
[Gate]
TOP VIEW SIDE VIEW
DETAIL A
BOTTOM VIEW
APPLICATION
Terminal No.
(a)Drain [output]
(b)Source [GND]
(c)Gate [input]
(d)Source
For output stage of high power amplifiers in
UHF band mobile radio sets.
SIDE VIEW
UNIT:mm
DETAIL A
NOTES:
1. ( ) Typical value
RoHS COMPLIANT
RD09MUP2 is a RoHS compliant product.
RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high
melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)
(c)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
VDSS Drain to source voltage
VGSS Gate to source voltage
CONDITIONS
Vgs=0V
Vds=0V
ID
Pin
Pch
Tj
Tstg
Rth j-c
Drain Current
Input Power
Channel dissipation
Junction Temperature
Storage temperature
Thermal resistance
-
Zg=Zl=50Ω
Tc=25°C
-
-
Junction to case
Note: Above parameters are guaranteed independently.
RATINGS
40
-5 to +10
4.0
1.6
83
150
-40 to +125
1.5
UNIT
V
V
A
W
W
°C
°C
°C/W
D
G
S
SCHEMATIC DRAWING
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
LIMITS
MIN TYP MAX.
IDSS Zero gate voltage drain current VDS=17V, VGS=0V
- - 10
IGSS Gate to source leak current
VGS=10V, VDS=0V
- -1
VTH Gate threshold Voltage
VDS=12V, IDS=1mA
0.5 - 2.5
Pout Output power
ηD Drain efficiency
f=520MHz , VDD=7.2V
Pin=0.8W,Idq=1.0A
89
50 -
-
-
VSWRT Load VSWR tolerance
VDD=9.5V,Po=8W(Pin Control)
f=520MHz,Idq=1.0A,Zg=50Ω
Load VSWR=20:1(All Phase)
No destroy
Note: Above parameters, ratings, limits and conditions are subject to change.
UNIT
uA
uA
V
W
%
-
RD09MUP2
MITSUBISHI ELECTRIC
1/7
1st Jun. 2006
1 page  
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD09MUP2
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
RD09MUP2 S-PARAMETER DATA (@Vdd=7.2V, Id=500mA)
Freq.
[MHz]
100
120
140
S11
(mag) (ang)
0.900 -175.7
0.901 -176.4
0.905 -176.7
S21
(mag) (ang)
4.425 75.0
3.651 71.1
3.056 67.4
S12
(mag) (ang)
0.016
-7.1
0.014
-8.2
0.014 -10.4
S22
(mag) (ang)
0.798 -173.9
0.804 -174.4
0.808 -174.9
160 0.908 -177.2 2.614 64.2 0.013 -10.9 0.812 -175.1
180 0.909 -177.5 2.273 61.4 0.013 -10.0 0.819 -175.2
200 0.912 -177.6 2.003 58.7 0.011 -8.4 0.830 -175.1
220 0.916 -178.0 1.787 55.9 0.011 -6.0 0.842 -175.3
240 0.918 -178.5 1.602 53.3 0.010 -4.1 0.851 -175.3
260 0.922 -178.7 1.442 50.6 0.010 -5.6 0.857 -175.8
280 0.923 -178.9 1.297 48.0 0.009 0.6 0.859 -176.1
300 0.928 -179.0 1.176 45.8 0.008 2.6 0.863 -176.3
320 0.930 -179.1 1.075 44.1 0.008 8.2 0.866 -176.8
340 0.933 -179.3 0.989 42.3 0.008 15.1 0.878 -177.1
360 0.936 -179.6 0.910 40.0 0.008 25.3 0.889 -177.4
380 0.937 179.9 0.841 37.9 0.007 27.2 0.895 -177.8
400 0.939 179.7 0.775 36.3 0.008 35.5 0.897 -178.1
420 0.939 179.3 0.718 34.7 0.008 40.1 0.899 -178.6
440 0.945 179.1 0.667 33.4 0.008 45.0 0.900 -178.8
460 0.947 178.9 0.622 32.1 0.009 51.3 0.906 -179.3
480 0.950 178.8 0.582 30.7 0.009 56.2 0.913 -179.5
500 0.952 178.7 0.548 29.2 0.010 56.9 0.919 179.8
520 0.950 178.3 0.513 28.0 0.011 59.9 0.921 179.6
540 0.952 178.1 0.480 26.8 0.012 64.2 0.924 179.0
560 0.953 177.6 0.455 25.7 0.012 67.0 0.925 178.8
580 0.953 177.2 0.427 24.4 0.012 66.6 0.924 178.6
600 0.956 177.0 0.402 23.7 0.014 68.9 0.928 178.2
620 0.957 177.0 0.383 23.2 0.014 70.7 0.933 177.7
640 0.961 176.9 0.362 22.1 0.015 70.9 0.937 177.3
660 0.957 176.8 0.344 21.3 0.015 72.1 0.939 177.0
680 0.961 176.5 0.326 20.4 0.016 72.0 0.936 176.7
700 0.962 176.2 0.311 19.5 0.017 74.3 0.937 176.4
720 0.960 176.0 0.298 19.0 0.018 74.2 0.937 176.1
740 0.962 175.5 0.283 18.6 0.019 74.5 0.938 175.8
760 0.963 175.3 0.269 17.5 0.019 74.9 0.943 175.5
780 0.963 175.2 0.259 17.2 0.020 74.1 0.944 175.0
800 0.964 175.0 0.247 16.9 0.021 72.8 0.949 174.7
820 0.962 175.0 0.237 16.5 0.022 75.4 0.946 174.7
840 0.964 174.7 0.230 15.8 0.022 75.1 0.946 174.5
860 0.965 174.5 0.220 16.2 0.023 76.0 0.944 174.1
880 0.965 174.1 0.211 15.4 0.024 75.8 0.948 173.8
900 0.962 173.8 0.202 15.1 0.025 75.0 0.949 173.4
920 0.967 173.5 0.193 15.0 0.026 75.8 0.952 172.8
940 0.963 173.5 0.189 14.4 0.026 75.8 0.952 172.7
960 0.964 173.2 0.180 13.8 0.027 75.6 0.949 172.7
980 0.966 173.1 0.176 14.6 0.028 76.0 0.951 172.6
1000 0.964 173.0 0.170 14.0 0.029 76.5 0.952 172.2
RD09MUP2
MITSUBISHI ELECTRIC
5/7
1st Jun. 2006
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RD09MUP2.PDF ] | |
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