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PDF IRF7811APBF Data sheet ( Hoja de datos )

Número de pieza IRF7811APBF
Descripción HEXFET Power MOSFET
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRF7811APBF Hoja de datos, Descripción, Manual

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PD - 95264A
IRF7811APbF
Applications
l High Frequency Synchronous Buck
HEXFET® Power MOSFET
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
VDSS
28V
RDS(on) max
12m
Qg
17nC
for Telecom and Industrial Use
l 100% RG Tested
l Lead-Free
S1
AA
8D
S2
7D
Benefits
S3
6D
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
G4
5D
Top View
SO-8
Absolute Maximum Ratings
Symbol
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
fPower Dissipation
fPower Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
TJ
TSTG
Operating Junction and
Storage Temperature Range
Smoldering Temperature, for 10 seconds
Thermal Resistance
Symbol
RθJL
RθJA
gParameter
Junction-to-Drain Lead
fgJunction-to-Ambient
Notes  through … are on page 10
www.irf.com
Max
11f
9.1 f
91
2.5
1.6
0.02
±12
-55 to + 150
300 (1.6mm from case)
Typ Max
––– 20
––– 50
Units
A
W
W/°C
V
°C
Units
°C/W
1
1/11/05

1 page




IRF7811APBF pdf
IRF7811APbF
12
10
8
6
4
2
0
25
50 75 100 125
TJ , Junction Temperature (°C)
150
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
100
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
10 0.20
0.10
0.05
0.02
1
0.01
0.1
0.00001
PDM
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
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