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GLT44016 fiches techniques PDF

G-Link - 256K X 16 CMOS DYNAMIC RAM

Numéro de référence GLT44016
Description 256K X 16 CMOS DYNAMIC RAM
Fabricant G-Link 
Logo G-Link 





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GLT44016 fiche technique
G-LINK
www.DataSheet4U.com
GLT44016
256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Aug, 2000(Rev.3.1)
Features :
262,144 words by 16 bits organization.
Fast access time and cycle time.
Dual CAS Input.
Low power dissipation.
Read-Modify-Write, RAS -Only Refresh,
CAS -Before-RAS Refresh, Hidden
Refresh and Test Mode Capability.
512 refresh cycles per 8ms.
Available in 40-Pin 400 mil SOJ and 40/44
Pin TSOP(II)
Single 5.0V±10% Power Supply.
All inputs and Outputs are TTL
compatible.
Extended Data-Out(EDO) Page Mode
operation.
Description :
The GLT44016 is a 262,144 x 16 bit
high-performance CMOS dynamic random
access memory. The GLT44016 offers Fast
Page mode with Extended Data Output, and
has both BYTE WRITE and WORD WRITE
access cycles via two CAS pins. The
GLT44016 has symmetric address and
accepts 512-cycle refresh in 8ms interval.
All inputs are TTL compatible. EDO
Page Mode operation allows random access
up to 512 x 16 bits within a page, with cycle
times as short as 10ns.
The GLT44016 is best suited for
graphics, and DSP applications requiring
high performance memories.
HIGH PERFORMANCE
Max. RAS Access Time, (tRAC)
25 28 30 35 40 50
25 ns 28 ns 30 ns 35 ns 40 ns 50 ns
Max. Column Address Access Time, (tCAA)
13 ns 13 ns 16 ns 18 ns 20 ns 25 ns
Min. Extended Data Out Page Mode Cycle Time, (tPC) 10 ns 10 ns 12 ns 13 ns 15 ns 20 ns
Min. Read/Write Cycle Time, (tRC)
45 ns 45 ns 60 ns 65 ns 70 ns 85 ns
Max. CAS Access Time (tCAC)
8 ns 8 ns 10 ns 11 ns 12 ns 14 ns
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-1-
G-Link Technology Corporation,Taiwan
6F, No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.

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