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PDF 2N6784 Data sheet ( Hoja de datos )
| Número de pieza | 2N6784 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Data Sheet
December 2001
2N6784
[ /Title
(2N67
84)
/Sub-
ject
(2.25A
, 200V,
1.500
Ohm,
N-
Chan-
nel
Power
MOS-
FET)
/Autho
r ()
2.25A, 200V, 1.500 Ohm, N-Channel Power
MOSFET
The 2N6784 is an N-Channel enhancement mode silicon
gate power MOS field effect transistor designed for
applications such as switching regulators, switching
converters, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. This type can be operated directly from
integrated circuits.
Ordering Information
PART NUMBER
PACKAGE
BRAND
2N6784
TO-205AF
2N6784
NOTE: When ordering, use the entire part number.
Features
• 2.25A, 200V
• rDS(ON) = 1.500Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
SOURCE
GATE
©2001 Fairchild Semiconductor Corporation
2N6784 Rev. B
1 page  
2N6784
Typical Performance Curves Unless Otherwise Specified (Continued)
2.5
80µs PULSE TEST
2.0
1.5
1.0
TJ = -55oC
TJ = 25oC
TJ = 125oC
0.5
0
0 2 4 6 8 10
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
15
ID = 4A
10
10
80µs PULSE TEST
TJ = 150oC
TJ = 25oC
1.0
0.1
0
1.0 2.0 3.0
VSD, SOURCE TO DRAIN VOLTAGE (V)
4.0
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
VDS = 40V
VDS = 100V
VDS = 160V
5
0
0 2 4 6 8 10
Qg, TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
©2001 Fairchild Semiconductor Corporation
2N6784 Rev. B
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2N6784.PDF ] | |
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