|
|
PDF ZXMC4559DN8 Data sheet ( Hoja de datos )
| Número de pieza | ZXMC4559DN8 | |
| Descripción | COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de ZXMC4559DN8 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
ZXMC4559DN8
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel V(BR)DSS = 60V; RDS(ON) = 0.055 ; ID= 4.7A
P-Channel V(BR)DSS = -60V; RDS(ON) = 0.105 ; ID= -3.9A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• Motor Drive
• LCD backlighting
ORDERING INFORMATION
DEVICE
REEL TAPE
WIDTH
ZXMC4559DN8TA 7’‘ 12mm
ZXMC4559DN8TC 13’‘ 12mm
QUANTITY
PER REEL
500 units
2500 units
DEVICE MARKING
• ZXMC
4559
SO8
Q1 = N-CHANNEL
Q2 = P-CHANNEL
PINOUT
Top view
ISSUE 5 - MAY 2005
1 SEMICONDUCTORS
1 page  
ZXMC4559DN8
P-CHANNEL
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance (1)
Forward Transconductance (1) (3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
gfs
-60
-1.0
V ID=-250A, VGS=0V
-1.0 A VDS=-60V, VGS=0V
100 nA VGS=Ϯ20V, VDS=0V
0.085
0.125
V
I
D
=
-250
A,
VDS=
VGS
⍀ VGS=-10V, ID=-2.9A
⍀ VGS=-4.5V, ID=-2.4A
7.2 S VDS=-15V,ID=-2.9A
Ciss
Coss
Crss
1021
83.1
56.4
pF
pF VDS=-30 V, VGS=0V,
f=1MHz
pF
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
3.5
4.1
35
10
12.1
24.2
2.5
3.7
ns
ns VDD =-30V, ID=-1A
ns RG 6.0⍀, VGS=-10V
ns
nC VDS=-30V,VGS=-5V,
ID=-2.9A
nC
VDS=-30V,VGS=-10V,
nC
ID=-2.9A
nC
VSD -0.85 -0.95 V TJ=25°C, IS=-3.4A,
VGS=0V
trr
29.2
ns TJ=25°C, IF=-2A,
Qrr
39.6
nC di/dt= 100A/µs
NOTES
(1) Measured under pulsed conditions. Width Յ300s. Duty cycle Յ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 5 - MAY 2005
5 SEMICONDUCTORS
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet ZXMC4559DN8.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| ZXMC4559DN8 | COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET | Zetex Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |