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PDF UPG2155TB Data sheet ( Hoja de datos )

Número de pieza UPG2155TB
Descripción L-BAND 4 W HIGH POWER SPDT SWITCH
Fabricantes CEL 
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GaAs INTEGRATED CIRCUIT
UPG2155TB
NEC’s L-BAND 4 W HIGH POWER SPDT SWITCH
DESCRIPTION
The µPG2155TB is an L-band SPDT GaAs FET switch developed for digital cellular or cordless telephone
applications. The device can operate from 500 MHz to 2.5 GHz, with low insertion loss and high linearity.
FEATURES
• Low insertion loss
: LINS = 0.35 dB TYP. @ Vcont = +2.6 V/0 V, f = 1.0 GHz
: LINS = 0.40 dB TYP. @ Vcont = +2.6 V/0 V, f = 2.0 GHz
: LINS = 0.45 dB TYP. @ Vcont = +2.6 V/0 V, f = 2.5 GHz
• High linearity
: 2f0 = 70 dBc TYP. @ Vcont = +2.6 V/0 V, f = 0.9 GHz, Pin = +34.5 dBm
: 3f0 = 75 dBc TYP. @ Vcont = +2.6 V/0 V, f = 0.9 GHz, Pin = +34.5 dBm
• 6-pin super minimold package (2.1 × 2.0 × 0.9 mm)
APPLICATION
• GSM Triple/Quad band digital cellular
ORDERING INFORMATION
Part Number
µPG2155TB-E4
Order Number
Package
µPG2155TB-E4-A 6-pin super minimold
(Pb-Free)
Marking
Supplying Form
G4R
Embossed tape 8 mm wide
Pin 4, 5, 6 face the perforation side of the tape
Qty 3 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPG2155TB-A
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PG10583EJ01V0DS (1st edition)
Date Published November 2005 CP(K)
© NEC Compound Semiconductor Devices, Ltd. 2005

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UPG2155TB pdf
PACKAGE DIMENSIONS
6-PIN SUPER MINIMOLD (UNIT: mm)
2.1±0.1
1.25±0.1
UPG2155TB
0.1 MIN.
Data Sheet PG10583EJ01V0DS
5

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