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PDF BCR08AM Data sheet ( Hoja de datos )
| Número de pieza | BCR08AM | |
| Descripción | LOW POWER USE PLANAR PASSIVATION TYPE | |
| Fabricantes | RENESAS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BCR08AM (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
1 page  
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
CURVES APPLY REGARDLESS
140 OF CONDUCTION ANGLE
NATURAL CONVECTION
120 NO FINS
100
80
360°
60 CONDUCTION
RESISTIVE,
40 INDUCTIVE
20 LOADS
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
RMS ON-STATE CURRENT (A)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
103
7 TYPICAL EXAMPLE
5
3
2
102
7
5
3
2
101
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
JUNCTION TEMPERATURE (°C)
MITSUBISHI SEMICONDUCTOR <TRIAC>
BCR08AM
LOW POWER USE
PLANAR PASSIVATION TYPE
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
105
7 TYPICAL EXAMPLE
5
3
2
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
102
7
5
DISTRIBUTION
3 T2+, G–
2 TYPICAL EXAMPLE
101
7
5
3
2
100
7
5
3 T2– , G–
2 TYPICAL EXAMPLE
10–1
–40
0
40 80 120 160
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
140 Tj = 125°C
120
I QUADRANT
100
80
60
40
III QUADRANT
20
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
Mar. 2002
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BCR08AM.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BCR08AM | LOW POWER USE PLANAR PASSIVATION TYPE | RENESAS |
| BCR08AM-12 | Triac Low Power Use |  Renesas Technology |
| BCR08AM-14 | LOW POWER USE PLANAR PASSIVATION TYPE |  Mitsubishi Electric Semiconductor |
| BCR08AM-14A | Triac Low Power Use | Renesas Technology |
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