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Renesas Technology - Silicon N Channel Power MOS FET High Speed Power Switching

Numéro de référence HAT2114RJ
Description Silicon N Channel Power MOS FET High Speed Power Switching
Fabricant Renesas Technology 
Logo Renesas Technology 





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HAT2114RJ fiche technique
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HAT2114R, HAT2114RJ
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
Low on-resistance
Capable of 4.5V gate drive
High density mounting
“J” is for Automotive application
High temperature D-S leakage guarantee
Avalanche rating
Outline
REJ03G0120-0100Z
(Previous ADE-208-1544(Z))
Rev.1.00
Oct.06.2003
SOP-8
78
DD
8 7 65
1 234
56
DD
24
GG
S1
MOS1
S3
MOS2
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
Rev.1.00, Oct.06.2003, page 1 of 9

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HAT2114R Silicon N Channel Power MOS FET High Speed Power Switching Renesas Technology
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HAT2114RJ Silicon N Channel Power MOS FET High Speed Power Switching Renesas Technology
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