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PDF IRLML6402PBF Data sheet ( Hoja de datos )
| Número de pieza | IRLML6402PBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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IRLML6402PbF
l Ultra Low On-Resistance
l P-Channel MOSFET
l SOT-23 Footprint
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
l Lead-Free
l RoHS Compliant, Halogen-Free
G1
S2
Description
These P-Channel MOSFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET® power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device for use in battery
and load management.
A thermally enhanced large pad leadframe has been incorporated into the
standard SOT-23 package to produce a HEXFET Power MOSFET with the
industry's smallest footprint. This package, dubbed the Micro3™, is ideal
for applications where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin
application environments such as portable electronics and PCMCIA
cards. The thermal resistance and power dissipation are the best available.
HEXFET® Power MOSFET
VDSS = -20V
3D
RDS(on) = 0.065Ω
Micro3™
Base Part Number
Package Type
Standard Pack
Form
Quantity
Orderable Part Number
IRLML6402TRPbF
Micro3™ (SOT-23)
Tape and Reel
3000
IRLML6402TRPbF
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
EAS
VGS
TJ, TSTG
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-20
-3.7
-2.2
-22
1.3
0.8
0.01
11
± 12
-55 to + 150
Units
V
A
W
W/°C
mJ
V
°C
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient
Typ.
75
Max.
100
Units
°C/W
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
April 28, 2014
1 page  
IRLML6402PbF
4.0
3.0
2.0
1.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 ID
TOP
-1.7A
-3.0A
20 BOTTOM -3.7A
15
10
5
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
1000
100
D = 0.50
0.20
10 0.10
0.05
0.02
0.01
1
0.1
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
t1, Rectangular Pulse Duration (sec)
1
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
April 28, 2014
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRLML6402PBF.PDF ] | |
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