|
|
Numéro de référence | NTB5605P | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | ON Semiconductor | ||
Logo | |||
1 Page
www.DataSheet4U.com
NTB5605P
Power MOSFET
−60 V, −18.5 A, P−Channel, D2PAK
Features
• Designed for Low RDS(on)
• Withstands High Energy in Avalanche and Commutation Modes
Applications
• Power Supplies
• PWM Motor Control
• Converters
• Power Management
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°C
VDSS
VGS
ID
−60
$20
−18.5
V
V
A
Power Dissipation
(Note 1)
Steady TA = 25°C
State
PD
88 W
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 25 V, VGS = 5.0 V, IPK = 15 A,
L = 3.0 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDM
TJ,
TSTG
EAS
−55
−55 to
175
338
A
°C
mJ
TL 260 °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Case (Drain) – Steady State
RqJC
1.7 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 1″ pad size (Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu Area 0.41 in2).
http://onsemi.com
V(BR)DSS
−60 V
RDS(on) TYP
120 mW @ −5.0 V
ID MAX
−18.5 A
P−Channel
D
G
S
4
12
D2PAK
CASE 418B
STYLE 2
3
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
NTB5605P
YWW
Drain
Gate Source
NTB5605P = Device Code
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping†
NTB5605P
D2PAK
50 Units/Rail
NTB5605PT4
D2PAK
800/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 1
1
Publication Order Number:
NTB5605P/D
|
|||
Pages | Pages 8 | ||
Télécharger | [ NTB5605P ] |
No | Description détaillée | Fabricant |
NTB5605P | Power MOSFET ( Transistor ) | ON Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |