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NTB52N10 fiches techniques PDF

ON Semiconductor - N-Channel Enhancement-Mode D2PAK

Numéro de référence NTB52N10
Description N-Channel Enhancement-Mode D2PAK
Fabricant ON Semiconductor 
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NTB52N10 fiche technique
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NTB52N10
Power MOSFET
52 Amps, 100 Volts
N−Channel Enhancement−Mode D2PAK
Features
Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Avalanche Energy Specified
IDSS and RDS(on) Specified at Elevated Temperature
Mounting Information Provided for the D2PAK Package
Pb−Free Packages are Available
Typical Applications
PWM Motor Controls
Power Supplies
Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Drain−to−Source Voltage (RGS = 1.0 MW)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tpv10 ms)
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 100°C
− Pulsed (Note 1)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 2)
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
100
100
"20
"40
52
40
156
178
1.43
2.0
Vdc
Vdc
Vdc
Adc
W
W/°C
W
Operating and Storage Temperature Range
TJ, Tstg −55 to
+150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc,
IL(pk) = 40 A, L = 1.0 mH, RG = 25 W)
EAS 800 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 2)
RqJC
RqJA
RqJA
°C/W
0.7
62.5
50
Maximum Lead Temperature for Soldering
Purposes, 1/8in from case for 10 seconds
TL 260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%.
2. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu. Area 0.412 in2).
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 3
1
http://onsemi.com
VDSS
100 V
RDS(ON) TYP
30 mW @ 10 V
ID MAX
52 A
N−Channel
D
G
4
12
3
D2PAK
CASE 418B
STYLE 2
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
NTB
52N10G
AYWW
12 3
Gate Drain Source
NTB52N10
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NTB52N10
NTB52N10G
Package
D2PAK
D2PAK
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
NTB52N10T4
NTB52N10T4G
D2PAK
D2PAK
(Pb−Free)
800 / Tape & Reel
800 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTB52N10/D

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