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HN29WB800 fiches techniques PDF

Hitachi Semiconductor - (HN29WB800 / HN29WT800) CMOS Flash Memory

Numéro de référence HN29WB800
Description (HN29WB800 / HN29WT800) CMOS Flash Memory
Fabricant Hitachi Semiconductor 
Logo Hitachi Semiconductor 





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HN29WB800 fiche technique
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HN29WT800 Series
HN29WB800 Series
1048576-word × 8-bit / 524288-word × 16-bit CMOS Flash Memory
ADE-203-537A(Z)
Rev. 1.0
May. 9, 1997
Description
The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword × 8-bit/512-kword × 16-bit CMOS Flash
Memory with DINOR (DIvided bitline NOR) type memory cells, that realize programming and erase
capabilities with a single 3.3 V power supply. The built-in Sequence Controller allows Automatic
Program/Erase without complex external control. HN29WT800 Series, HN29WB800 Series enable the low
power and high performance systems such as mobile, personal computing and communication products.
Features
On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V
Access time: 80/100/120 ns (max)
Low power dissipation:
ICC = 30 mA (max) (Read)
ICC = 200 µA (max) (Standby)
ICC = 40 mA (max) (Program)
ICC = 40 mA (max) (Erase)
ICC = 1 µA (typ) (Deep powerdown)
Automatic page programming:
Programming time: 25 ms (typ)
Program unit: 128 word
Automatic erase:
Erase time: 50 ms (typ)
Erase unit: Boot block; 8-kword/16-kbyte × 1
Parameter block; 4-kword/8-kbyte × 2
Main block; 16-kword/32-kbyte × 1
32-kword/64-kbyte × 15
This product is compatible with M5M29FB/T800xx by Ltd. Mitsubishi.

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