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PDF BLF369 Data sheet ( Hoja de datos )
| Número de pieza | BLF369 | |
| Descripción | VHF power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
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BLF369
VHF power LDMOS transistor
Rev. 01 — 13 April 2006
Objective data sheet
1. Product profile
1.1 General description
A 500 W LDMOS RF Power transistor for broadcast transmitter applications and industrial
applications in the HF/VHF band.
Table 1: Typical performance
Typical RF performance at VDS = 32 V and Th = 25 °C in a common-source 225 MHz test circuit.[1]
Mode of operation f
PL PL(PEP) Gp ηD IMD3
(MHz)
(W) (W)
(dB) (%)
(dBc)
CW, class AB
225
500 -
18 60 -
2-tone, class AB
f1 = 225; f2 = 225.1 -
500
19 47 −28
[1] Th is the heatsink temperature.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical CW performance at 225 MHz, a drain-source voltage VDS of 32 V and a
quiescent drain current IDq = 2 × 1.0 A:
N Load power PL = 500 W
N Gain Gp ≥ 18 dB
N Drain efficiency ηD = 60 %
I Advanced flange material for optimum thermal behavior and reliability
I Excellent ruggedness
I High power gain
I Designed for broadband operation (HF/VHF band)
I Source on underside eliminates DC isolators, reducing common-mode inductance
I Easy power control
1.3 Applications
I Communication transmitter applications in the UHF band
I Industrial applications in the UHF band
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Philips Semiconductors
BLF369
VHF power LDMOS transistor
7.2 Reliability
106
Years
105
104
103
102
10
(1) (2) (3) (4) (5) (6)
(7) (8) (9) (10) (11)
1
0 6 12 18
TTF; 0.1 % failure fraction; best estimate values.
(1) Tj = 100 °C
(2) Tj = 110 °C
(3) Tj = 120 °C
(4) Tj = 130 °C
(5) Tj = 140 °C
(6) Tj = 150 °C
(7) Tj = 160 °C
(8) Tj = 170 °C
(9) Tj = 180 °C
(10) Tj = 190 °C
(11) Tj = 200 °C
Fig 5. BLF369 electromigration (ID, total device)
8. Test information
Table 8: List of components
For test circuit, see Figure 6, 7 and 8.
Component Description
B1 semi rigid coax
B2 semi rigid coax
C1 multilayer ceramic chip capacitor
C2, C3
multilayer ceramic chip capacitor
C4, C7
multilayer ceramic chip capacitor
C5, C8
ceramic capacitor
C6, C9
electrolytic capacitor
C10, C11, C13, multilayer ceramic chip capacitor
C14
C12, C15
ceramic capacitor
Value
25 Ω; 120 mm
25 Ω; 56 mm
91 pF
56 pF
100 pF
15 nF
220 µF
220 pF
15 nF
BLF369_1
Objective data sheet
Rev. 01 — 13 April 2006
001aae504
24 30
Idc (A)
Remarks
EZ90-25-TP
EZ90-25-TP
[1]
[1]
[1]
[1]
[1]
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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Philips Semiconductors
BLF369
VHF power LDMOS transistor
10. Abbreviations
Table 9: Abbreviations
Acronym
Description
CW Continuous Wave
GSM
Global System for Mobile communications
LDMOS
Laterally Diffused Metal Oxide Semiconductor
PCB
Printed-Circuit Board
PEP
Peak Envelope Power
RF Radio Frequency
TTF Time To Failure
VSWR
Voltage Standing Wave Ratio
BLF369_1
Objective data sheet
Rev. 01 — 13 April 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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