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Sirenza Microdevices - Cascadable InGaP/GaAs HBT MMIC Amplifier

Numéro de référence SBW-5089
Description Cascadable InGaP/GaAs HBT MMIC Amplifier
Fabricant Sirenza Microdevices 
Logo Sirenza Microdevices 





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Preliminary Data Sheet
Product Description
Sirenza Microdevices’ SBW-5089 is a high performance
InGaP/GaAs Heterojunction Bipolar Transistor MMIC
Amplifier. A Darlington configuration designed with InGaP
process technology provides broadband performance up to
8 GHz with excellent thermal perfomance. The heterojunction
increases breakdown voltage and minimizes leakage current
between junctions. Cancellation of emitter junction non-
linearities results in higher suppression of intermodulation
products. Only a single positive supply voltage, DC-blocking
capacitors, a bias resistor, and an optional RF choke are
required for operation.
Gain & Return Loss Vs. Frequency
See App Circuit Page 6
30
20
10 S21
0
-10 S22
-20 S11
-30
012345678
Frequency (GHz)
SBW-5089
DC-8 GHz, Cascadable
InGaP/GaAs HBT MMIC Amplifier
Product Features
• Wideband Flat Gain to 3GHz: +/-1.4dB
• P1dB = 13.4 @ 6GHz
• Input / Output VSWR < 2:3 to 8GHz
• Operates From Single Supply
• Low Thermal Resistance
• Darlington Configuration
Applications
• Wideband Instrumentation
• Fiber Optic Driver
• OC-48
• Basestation
• SAT COM
Symbol
Parameter
Units
Frequency
Min.
Typ. Max.
G
Small Signal Gain
( PC board and connector losses de-embeded )
850 MHz
19.3
20.3
21.3
dB
3000 MHz
4200 MHz
17.0
16.2
18.0
17.2
19.0
18.2
6000 MHz
14.5
15.5
16.5
P1dB
Output Power at 1dB Compression
dBm
850 MHz
1950 MHz
18.4
20.1
19.4
OIP3
Output Third Order Intercept Point
dBm
850 MHz
1950 MHz
32.0
35.5
34.0
Pout
Output Power @ -45dBc ACP IS-95
9 Forward Channels
dBm
1950MHz
13.0
Bandwidth Determined by Return Loss (>10dB)
MHz
6000
IRL Worst case Input Return Loss
dB DC-6000MHz 7
10
ORL
Worst case Output Return Loss
dB DC-6000MHz 8
11
NF Noise Figure
dB 1950 MHz
3.9 4.4
VD Device Operating Voltage
V
4.5 4.9
5.3
ID Device Operating Current
mA
72 80 88
RTH, j-l Thermal Resistance (junction to lead)
Test Conditions:
VS = 8 V
RBIAS = 39 Ohms
ID = 80 mA Typ.
TL = 25ºC
°C/W
97
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no
responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or
licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-
support devices and/or system.Copyright 2003 Sirenza Microdevices, Inc.. All worldwide rights reserved.
303 South Technology Court, Broomfield, CO. 80021 Phone: (800) SMI-MMIC
http://www.sirenza.com
1 EDS-103325 Rev. A

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