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ETC - (ND2406L / ND2410L) N-Channel Depletion-Mode MOSFET Transistors

Numéro de référence ND2406L
Description (ND2406L / ND2410L) N-Channel Depletion-Mode MOSFET Transistors
Fabricant ETC 
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ND2406L fiche technique
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ND2406L/2410L, BSS129
N-Channel Depletion-Mode MOSFET Transistors
Product Summary
Part Number
ND2406L
ND2410L
BSS129
V(BR)DSV Min (V)
240
230
rDS(on) Max (W)
6
10
20
VGS(off) (V)
–1.5 to –4.5
–0.5 to –2.5
–0.7 (min)
ID (A)
0.23
0.18
0.15
Features
Benefits
D High Breakdown Voltage: 260 V
D Normally “On” Low rDS Switch: 3.5 W
D Low Input and Output Leakage
D Low-Power Drive Requirement
D Low Input Capacitance
D Full-Voltage Operation
D Low Offset Voltage
D Low Error Voltage
D Easily Driven Without Buffer
D High-Speed Switching
Applications
D Normally “On” Switching Circuits
D Current Sources/Limiters
D Power Supply, Converter Circuits
D Solid-State Relays
D Telecom Switches
TO-226AA
(TO-92)
S1
TO-92-18CD
(TO-18 Lead Form)
S1
G2
D2
D3
G3
Top View
ND2406L
ND2410L
Top View
BSS129
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Symbol ND2406L ND2410L BSS129 Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Currenta
TA= 25_C
TA= 100_C
Power Dissipation
Maximum Junction-to-Ambient
TA= 25_C
TA= 100_C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PD
RthJA
TJ, Tstg
240
"30
0.23
0.14
0.9
0.8
0.32
156
240
"30
0.18
0.12
0.9
0.8
0.32
156
–55 to 150
230
"20
0.15
0.6
1.0
0.4
125
V
A
W
_C/W
_C
Notes
a. Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70198.
Applications information may also be obtained via FaxBack, request document #70612.
Siliconix
S-52426—Rev. C, 14-Apr-97
1

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