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PDF MA2910 Data sheet ( Hoja de datos )
| Número de pieza | MA2910 | |
| Descripción | RADIATION HARD MICROPROGRAM CONTROLLER | |
| Fabricantes | Gec Plessey | |
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MA2910
RADIATION HARD MICROPROGRAM CONTROLLER
The industry standard MA2910 Microprogram Controller
forms part of the MA2900 family of devices.
Offering a building block approach to microcomputer and
controller design, each device in the range is expandable
permitting efficient emulation of any microcode-controlled
machine. The family has been designed for operation in
severe environments such as space, and is qualified to the
highest levels of reliability.
The MA2910 Micro-program Controller is an address
sequencer intended for sequence control of microinstructions
stored in microprogram memory in high speed micro-
processor applications.
All internal elements are full 12 bits wide and address up to
4096 words with one chip. The device has an integral settable
12 bit internal loop counter for repeating instructions and
counting loop iterations.
The MA2910 has four address sources which allow
Microprogram Address to be selected from the microgram
counter, branch address bus, 9 level push/pop stack, or
internal holding register.
The MA2910 supports 100ns cycle times and has an
integral decoder function to enable external devices onto
branch address bus which eliminates the requirement for an
external decoder.
FEATURES
I Fully Compatible with Industry Standard 2910A
I CMOS SOS Technology
I Radiation Hard and High SEU Immunity
I High Speed / Low Power
I Fully TTL Compatible
MA2910
APRIL 1995
DS3578-2.5
Figure 1: Block Diagram
1
1 page  
MA2910
Figure 5: 2 JUMP MAP (JMAP)
In the example of Figure 5, microinstructions at locations
50,51, 52 and 53 might have been the fetch sequence and at
its completion at location 53, the jump map function would be
contained in the pipeline register. This example shows the
mapping PROM outputs to be 90; therefore, an unconditional
jump to microprogram memory address 90 is performed
Instruction 4: Push/Conditional, Load Counter.
This instruction is used primarily for setting up loops in
microprogram firmware. In this example, when instruction 52 is
in the pipeline register, a PUSH will be made onto the stack
and the counter will be loaded based on the condition. When a
PUSH occurs, the value pushed is always the next sequential
instruction address. In this case, the address is 53. If the test
fails, the counter is not loaded; if it is passed, the counter is
loaded with the value contained in the pipeline register branch
address field.
Thus, a single microinstruction can be used to set up a
loop to be executed a specific number of times. Instruction 8
will describe how to use the pushed value and the register/
counter for looping.
Instruction 3: Conditional Jump Pipeline.
This instruction derives its branch address from the
pipeline register branch address value (BR0-BR11). This
instruction provides a technique for branching to various
microprogram sequences depending upon the test condition
inputs. Quite often, state machines are designed which simply
execute tests on various inputs waiting for the condition to
come true. When the true condition is reached, the machine
then branches and executes a set of microinstructions to
perform some functions. This usually has the effect of resetting
the input under test until some point in the future.
The example shows the conditional jump via the pipeline
register address at location 52. When the contents of
mlcroprogram memory word 52 are in the pipeline register, the
next address will be either location 53 or 30, in this example. If
the test is passed, the value currently in the pipeline register
(30) will be selected. If the test fails, the next address selected
will be contained in the microprogram counter which, in this
example, is location 53.
Figure 7: 4 PUSH/COND LD CNTR (PUSH)
Instruction 5: Conditional Jump-to-Subroutine.
This instruction is a Conditional Jump-to-Subroutine via the
register/counter of the contents of the PIPELINE register. A
PUSH is always performed and one of two subroutines
executed. In this example, either the subroutine beginning at
address 80 or the subroutine beginning at address 90 will be
performed. A RETURN-FROM-SUBROUTINE (instruction
number 10) returns the microprogram flow to address 55.
In order for this microinstruction control sequence to
operate correctly, both the next address fields of instruction 53
and the next address fields of instruction 54 would have to
contain the proper value. Lets assume that the branch address
Figure 6: 3 COND JUMP PL (CLP)
Figure 8: 5 COND JSB R/PL (JSRP)
5
5 Page 
MA2910
DC CHARACTERISTICS AND RATINGS
Parameter
Supply Voltage
Input Voltage
Current Through Any Pin
Operating Temperature
Storage Temperature
Min Max
-0.5 7
-0.3 VDD+0.3
-20 +20
-55 125
-65 150
Figure 24: Absolute Maximum Ratings
Units
V
V
mA
°C
°C
Note: Stresses above those listed may cause permanent
damage to the device. This is a stress rating only and
functional operation of the device at these conditions, or at
any other condition above those indicated in the operations
section of this specification, is not implied. Exposure to
absolute maximum rating conditions for extended periods
may affect device reliability.
Subgroup
1
2
3
9
10
11
Definition
Static characteristics specified in Figure 26 at +25°C
Static characteristics specified in Figure 26 at +125°C
Static characteristics specified in Figure 26 at -55°C
Switching characteristics specified in Figures 27 to 29 at +25°C
Switching characteristics specified in Figures 27 to 29 at +125°C
Switching characteristics specified in Figures 27 to 29 at -55°C
Figure 25: Definition of Subgroups
Symbol Parameter
Conditions
Total dose radiation not exceeding
3x105 Rad (Si)
Min.
Typ.
Max .
Units
VDD Supply voltage
-
VIH Input high voltage
-
VIL Input low voltage
-
VOH Output high voltage
IOH = -2mA
VOL Output low voltage
IOL = 5mA
IIN
Input leakage current (Note 1)
VDD = 5.5V,
VIN = VSS or VDD
4 5 5.0 5 5 V
2.0 - - V
- - 08 V
2.4 - - V
- - 0.4 V
- - ±10 µA
IOZ Tristate leakage current (Note 1) VDD = 5.5V,
VIN = VSS Or VDD
IDD Power supply current
Static, VDD = 5.5V
-
-
- ±50 µA
0.1 10
mA
Mil-Std-883, method 5005, subgroups 1, 2, 3
VDD = 5V ±10%, over full operating temperature range.
Note 1: Worst case at TA = +125°C, guaranteed at TA = -55°C. 300K Rad(Si) values at higher radiation levels are available on
request.
Figure 26: Operating Electrical Characteristics
11
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