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PDF MA2911 Data sheet ( Hoja de datos )
| Número de pieza | MA2911 | |
| Descripción | (MA2909 / MA2911) RADIATION HARD MICROPROGRAM SEQUENCER | |
| Fabricantes | Gec Plessey | |
| Logotipo |  |
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MA2909/11
APRIL 1995
PRELIMINARY INFORMATION
DS3577-3.4
MA2909/11
RADIATION HARD MICROPROGRAM SEQUENCER
The MA2909/11 Microprogram Sequencer is fully
compatible with the industry standard 2909A and 2911A
components, and forms part of the GPS 2900 Series of
devices. The series offers a building block approach to
microcomputer and controller design, with each device in the
range being expandable to permit efficient emulation of any
microcode machine.
The devices have tristate outputs and have an internal
address register, with all internal registers changing state on
LOW to HIGH clock transition.
The 4-bit slice can cascade to any number of microwords.
Branch input for N-way branches is supported. Additional
features include:
FEATURES
I Fully Compatible with Industry Standard 2909A and
2911A Components
I Radiation Hard CMOS SOS Technology
I High SEU Immunity
I High Speed / Low Power
I Fully TTL Compatible
I 4-bit cascadable microprogram counter.
I 4 x 4 file with stack counter supporting nesting
microsubroutines.
I Zero input for returning to the zero microcode word.
I Individual OR input for each bit for branching to higher
microinstructions (2909 only).
The 2909 is a 4-bit wide address controller intended for
sequencing through a series of microinstructions contained in
a ROM or PROM. Two 2909s may be interconnected to
generate an 8-bit address (256 words), and three may be used
to generate a 12-bit address (4K words).
The 2909 can select an address from any of four sources:
1) A set of external direct inputs (D);
2) External data from the R inputs, stored in an internal
register;
3) A four-word push/pop stack; or
4) A program counter register (which usually contains the
last address plus one).
The push/pop stack includes certain control lines so that it
can efficiently execute nested subroutine linkages. Each of the
four outputs can be OR’ed with an external input for conditional
skip or branch instructions, and a separate line forces the
outputs to all zeroes. The outputs are three-state.
The 2911 is an identical circuit to the 2909 except the four
OR inputs are removed and the D and R inputs are tied
together.
1
1 page  
MA2909/11
Execute Cycle
T0 T1
T2 T3
T4
T5
T6 T7
2909 inputs
(from µWR)
Internal
Registers
2909 Output
ROM Output
Contents of µWR
(instruction
being executed)
S1, S0
FE
PUP
D
µPC
STK0
STK1
STK2
STK3
Y
(Y)
µWR
0
H
X
X
J+1
-
-
-
-
J+1
I(J + 1)
0
H
X
X
J+2
-
-
-
-
J+2
JSR A
3
L
H
A
J+3
-
-
-
-
A
I(A)
0
H
X
X
A+1
J+3
-
-
-
A+1
I(A + 1)
0
H
X
X
A+2
J+3
-
-
-
A+2
RTS
2
L
L
X
A+3
J+3
-
-
-
J+3
I(J + 3)
0
H
X
X
J+4
-
-
-
-
J+4
I(J + 4)
0
H
X
X
J+5
-
-
-
-
J+5
I(J + 5)
I(J) I(J + 1) JSR A I(A) I(A + 1) RTS I(J + 3) I(J + 4)
Table 3: Subroutine Execution
CONTROL MEMORY
Microprogram
Execute
Cycle
Address
Sequencer
Instruction
J-1 -
T0 J
-
T1 J + 1
-
T2
J+2
JSR A
T6 J + 3
-
T7 J + 4
-
--
--
--
--
--
T3 A
I(A)
T4 A + 1
-
T5 A + 2 RTS
--
--
--
--
--
--
T8
T9
5
5 Page 
MA2909/11
RADIATION TOLERANCE
Total Dose Radiation Testing
For product procured to guaranteed total dose radiation
levels, each wafer lot will be approved when all sample
devices from each lot pass the total dose radiation test.
The sample devices will be subjected to the total dose
radiation level (Cobalt-60 Source), defined by the ordering
code, and must continue to meet the electrical parameters
specified in the data sheet. Electrical tests, pre and post
irradiation, will be read and recorded.
GEC Plessey Semiconductors can provide radiation
testing compliant with MIL-STD-883 test method 1019,
Ionizing Radiation (Total Dose).
Total Dose (Function to specification)*
3x105 Rad(Si)
Transient Upset (Stored data loss)
5x1010 Rad(Si)/sec
Transient Upset (Survivability)
>1x1012 Rad(Si)/sec
Neutron Hardness (Function to specification) >1x1015 n/cm2
Single Event Upset**
1x10-10 Errors/bit day
Latch Up
Not possible
* Other total dose radiation levels available on request
** Worst case galactic cosmic ray upset - interplanetary/high altitude orbit
Table 11: Radiation Hardness Parameters
ORDERING INFORMATION
Unique Circuit Designator
Radiation Tolerance
S Radiation Hard Processing
R 100 kRads (Si) Guaranteed
Q 300 kRads (Si) Guaranteed
MAx2909xxxxx
MAx2911xxxxx
Package Type
C Ceramic DIL (Solder Seal)
N Naked Die
F Flatpack (Solder Seal)
QA/QCI Process
(See Section 9 Part 4)
Test Process
(See Section 9 Part 3)
Assembly Process
(See Section 9 Part 2)
For details of reliability, QA/QC, test and assembly
options, see ‘Manufacturing Capability and Quality
Assurance Standards’ Section 9.
Reliability Level
L Rel 0
C Rel 1
D Rel 2
E Rel 3/4/5/STACK
B Class B
S Class S
11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet MA2911.PDF ] | |
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