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PDF IRF7421D1PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7421D1PBF | |
| Descripción | FETKY MOSFET / Schottky Diode | |
| Fabricantes | International Rectifier | |
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PD- 95304
IRF7421D1PbF
FETKYä MOSFET / Schottky Diode
l Co-packaged HEXFET® Power
MOSFET and Schottky Diode
l Ideal For Synchronous Regulator
Applications
l Generation V Technology
l SO-8 Footprint
l Lead-Free
Description
A1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer
the designer an innovative board space saving solution for switching
regulator applications. Generation 5 HEXFETs utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. Combining
this technology with International Rectifier's low forward drop Schottky
rectifiers results in an extremely efficient device suitable for use in a wide
variety of portable electronics applications.
VDSS = 30V
RDS(on) = 0.035Ω
Schottky Vf = 0.39V
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
SO-8
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
Maximum
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Continuous Drain Current, VGS@10VÃ
Pulsed Drain Current À
Power Dissipation Ã
Linear Derating Factor
5.8
4.6
46
2.0
1.3
16
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Á
± 20
-5.0
TJ, TSTG
Junction and Storage Temperature Range
-55 to +150
Thermal Resistance Ratings
Parameter
RθJA
Junction-to-Ambient Ã
Maximum
62.5
Notes:
À Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)
Á ISD ≤ 4.1A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
 Pulse width ≤ 300µs; duty cycle ≤ 2%
à Surface mounted on FR-4 board, t ≤ 10sec.
www.irf.com
Units
A
W
W/°C
V
V/ns
°C
Units
°C/W
1
10/13/04
1 page  
IRF7421D1PbF
Power Mosfet Characteristics
1000
800
600
Ciss
V GS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
20 ID = 4.1A
16
VDS = 24V
VDS = 15V
12
400
Crss
200
0A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
8
4
FOR TEST CIRCUIT
SEE FIGURE 9
0A
0 5 10 15 20 25 30
Q G , Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
D = 0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.0001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
t1, Rectangular Pulse Duration (sec)
100
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF7421D1PBF.PDF ] | |
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