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Numéro de référence | IRF3704Z | ||
Description | HEXFET Power MOSFET | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
www.DataSheet4U.com
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
PD - 94756
IRF3704Z
IRF3704ZS
IRF3704ZL
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
20V 7.9m: 8.7nC
Benefits
l Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRF3704Z
D2Pak
IRF3704ZS
TO-262
IRF3704ZL
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
fMounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
iRθJC
Junction-to-Case
RθCS
fCase-to-Sink, Flat Greased Surface
fiÃRθJA Junction-to-Ambient
giRθJA Junction-to-Ambient (PCB Mount)
Notes through are on page 12
www.irf.com
Max.
20
± 20
67 h
47 h
260
57
28
0.38
-55 to + 175
300 (1.6mm from case)
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
2.65
–––
62
40
Units
V
A
W
W/°C
°C
Units
°C/W
1
3/1/04
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Pages | Pages 12 | ||
Télécharger | [ IRF3704Z ] |
No | Description détaillée | Fabricant |
IRF3704 | Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A) | International Rectifier |
IRF3704L | Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A) | International Rectifier |
IRF3704LPbF | SMPS MOSFET | International Rectifier |
IRF3704PbF | SMPS MOSFET | International Rectifier |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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