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PDF K6F1616U6C Data sheet ( Hoja de datos )
| Número de pieza | K6F1616U6C | |
| Descripción | 16Mb(1M x 16 bit) Low Power SRAM | |
| Fabricantes | Samsung semiconductor | |
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K6F1616U6C Family
CMOS SRAM
16Mb(1M x 16 bit) Low Power SRAM
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROP-
ERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.
ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT
GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or simi-
lar applications where Product failure could result in loss of life or personal or physical harm, or any military
or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
1 Revision 2.0
May 2005
1 page  
K6F1616U6C Family
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Symbol
Supply voltage
Vcc
Ground
Vss
Input high voltage
VIH
Input low voltage
VIL
Note:
1. TA=-40 to 85°C, otherwise specified
2. Overshoot: VCC+2.0V in case of pulse width ≤20ns.
3. Undershoot: -2.0V in case of pulse width ≤20ns.
4. Overshoot and Undershoot are sampled, not 100% tested.
Min
2.7
0
2.2
-0.23)
CAPACITANCE1) (f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
CMOS SRAM
Typ Max Unit
3.0 3.3 V
0 0V
-
Vcc+0.22)
V
- 0.6 V
Min Max Unit
- 8 pF
- 10 pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Average operating current
Output low voltage
Output high voltage
Standby Current (CMOS)
Symbol
Test Conditions
Min
ILI VIN=Vss to Vcc
-1
ILO CS1=VIH or CS2=VIL or OE=VIH or WE=VIL or LB=UB=VIH, -1
VIO=Vss to Vcc
ICC1 Cycle time=1µs, 100%duty, IIO=0mA, CS1≤0.2V, LB≤0.2V
or/and UB≤0.2V, CS2≥Vcc-0.2V, VIN≤0.2V or VIN≥VCC-0.2V
-
ICC2
Cycle time=Min, IIO=0mA, 100% duty, CS1=VIL,
CS2=VIH, LB=VIL or/and UB=VIL, VIN=VIL or VIH
70ns
55ns
-
-
VOL IOL = 2.1mA
-
VOH IOH = -1.0mA
2.4
Other input =0~Vcc
ISB1 1) CS1≥Vcc-0.2V, CS2≥Vcc-0.2V(CS1 controlled) or
2) 0V≤CS2≤0.2V(CS2 controlled)
-
Typ1)
-
-
-
-
-
-
-
5.0
Max
1
1
5
25
30
0.4
-
25
Unit
µA
µA
mA
mA
V
V
µA
1. Typical values are measured at VCC=3.0V, TA=25°C and not 100% tested.
5 Revision 2.0
May 2005
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet K6F1616U6C.PDF ] | |
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