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Número de pieza | MA4AGSW5 | |
Descripción | AlGaAs SP5T Reflective PIN Diode Switch | |
Fabricantes | Tyco Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MA4AGSW5 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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AlGaAs SP5T Reflective
PIN Diode Switch
V 1.00
Features
n Ultra Broad Bandwidth: 50 MHz to 50 GHz
n 1.7 dB Insertion Loss, 30 dB Isolation at 50 GHz
n Low Current comsumption.
-10 mA for low loss state
+10 mA for Isolation state
n M/A-COM’s unique patent pending AlGaAs
n hetero-junction anode technology.
n Silicon Nitride Passivation
n Polyamide Scratch protection
Description
M/A-COM’s MA4AGSW5 is an Aluminum-Gallium- Arsenide
anode enhanced, SP5T PIN diode switch. AlGaAs anodes, which
utilize M/A-COM’s patent pending hetero-junction technology,
produce less loss than conventional GaAs processes, by as much as
0.3 dB reduction in insertion loss at 50 GHz. These devices are
fabricated on a OMCVD epitaxial wafer using a process designed
for high device uniformity and extremely low parasitics. The
diodes themselves exhibit low series resistance, low capacitance,
and fast switching speed. They are fully passivated with silicon
nitride and have an additional layer of a polymer for scratch
protection. The protective coating prevents damage to the junction
and the anode air bridges during handling. Off-chip bias circuitry
is required and allows maximum design flexibility.
Applications
The low capacitance of the PIN diodes makes this device ideal for
use in microwave multi-throw switch designs. The low series
resistance of the diodes reduces the insertion loss of the devices at
microwave/millimeter-wave frequencies. These AlGaAs PIN
switches are used as switching arrays on radar systems, optical
switching networks, instrumentation, and other wideband
multi-throw switch assemblies.
MA4AGSW5 Layout
Absolute Maximum Ratings1
@ T= Room Temp.
(Unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
RF C.W. Incident Power
Breakdown Voltage
Bias Current
Maximum Rating
-55 °C to +125 °C
-65 °C to +150 °C
+ 23 dBm C. W.
25 V
+/- 30 mA per Diode
1. Exceeding any of these values may result in permanent
damage
1 page AlGaAs SP5T Reflective PIN Diode Switch
Chip Dimensions (mm and mils)
MA4AGSW5
V 1.00
Dim
A
B
C
D
E
F
G
Thickness
mm
Min.
1.53
1.61
0.76
0.39
0.82
0.16
0.65
0.09
Max.
1.56
1.64
0.79
0.41
0.84
0.18
0.67
0.11
mils
Min. Max.
60.0 61.2
63.2 64.4
29.7 30.9
15.2 16.0
32.2 33.0
6.5 7.2
25.7 26.5
3.7 4.3
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
5
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet MA4AGSW5.PDF ] |
Número de pieza | Descripción | Fabricantes |
MA4AGSW1 | AlGaAs SPST Reflective PIN Diode Switch | Tyco Electronics |
MA4AGSW1A | AlGaAs SPST Non-Reflective PIN Diode Switch | Tyco Electronics |
MA4AGSW2 | AlGaAs SP2T PIN Diode Switch | Tyco Electronics |
MA4AGSW3 | AlGaAs SP3T PIN Diode Switch | Tyco Electronics |
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