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PDF 2N6251 Data sheet ( Hoja de datos )
| Número de pieza | 2N6251 | |
| Descripción | High Voltage NPN Silicon Power Transistors | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N6251 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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www.DataShMeetO4UT.cOomROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6251/D
High Voltage NPN Silicon Power
Transistors
. . . designed for high voltage inverters, switching regulators and line operated
amplifier applications. Especially well suited for switching power supply applications.
• High Voltage Breakdown Rating
• Low Saturation Voltages
• Fast Switching Capability
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ High ES/b Energy Handling Capability
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous**
— Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Current— Continuous
— Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 100_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction (1)
Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for Soldering
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPurposes: 1/8” from Case for 5 Seconds
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(1) Indicates JEDEC Registered Data.
Symbol
VCEO(sus)
VCER(sus)
VCB
VEB
IC
ICM
IB
IBM
IE
IEM
PD
TJ, Tstg
Symbol
RθJC
TL
Value
350
375
450
6.0
15
30
10
20
25
50
175
100
1.0
– 65 to + 200
Max
1.0
275
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Adc
Watts
W/_ C
_C
Unit
_ C/W
_C
** JEDEC Registered Value is 10 A, Motorola Guaranteed Value is 15 A.
100
SECOND BREAKDOWN
80 DERATING
60 THERMAL
DERATING
2N6251
15 AMPERE
POWER TRANSISTOR
NPN SILICON
350 VOLTS
175 WATTS
CASE 1–07
TO–204AA
(TO–3)
40
20
REV 1
©3M–1ot0o4rola, Inc. 1995
0
0 40 80 120 160 200
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
Motorola Bipolar Power Transistor Device Data
1 page  
2N6251
PACKAGE DIMENSIONS
E
V
H
A
N
C
–T–
SEATING
PLANE
D 2 PL
K
0.13 (0.005) M T Q M Y M
U
L
–Y–
2
GB
1
–Q–
0.13 (0.005) M T Y M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.
INCHES
DIM MIN MAX
A 1.550 REF
B ––– 1.050
C 0.250 0.335
D 0.038 0.043
E 0.055 0.070
G 0.430 BSC
H 0.215 BSC
K 0.440 0.480
L 0.665 BSC
N ––– 0.830
Q 0.151 0.165
U 1.187 BSC
V 0.131 0.188
MILLIMETERS
MIN MAX
39.37 REF
––– 26.67
6.35 8.51
0.97 1.09
1.40 1.77
10.92 BSC
5.46 BSC
11.18 12.19
16.89 BSC
––– 21.08
3.84 4.19
30.15 BSC
3.33 4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
3–108
Motorola Bipolar Power Transistor Device Data
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2N6251.PDF ] | |
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