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PDF CHTB12 Data sheet ( Hoja de datos )

Número de pieza CHTB12
Descripción High Temperature Triacs
Fabricantes Crydom Corporation 
Logotipo Crydom Corporation Logotipo



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POWER COMPONENTS
Applications
• Heat Regulation
• Ovens
• Coffee Makers
• Cookers
• Light Dimming
• Control of Inductive Loads
• Motors
• Transformers
A1
A2
G
TO-220AB Isolated
(CHTA12)
A2
> Superior Commutating
Performance at High Temperature
(di/dt)c = 12A/ms @ (dv/dt)c = 50V/µs
> Ideal for Most Demanding Applications
> Alternistor/No Snubber Type
CHTA/CHTB12
> IGT 35 mA Max.
High Temperature 150˚C Series
> VDRM/VRMM 400, 600, 800V
12Amp - 400/600/800V - TRIAC
Absolute Maximum Ratings
RMS On-State Current (full sine wave)
Tc = 130˚C
Tc = 120˚C
Non Repetitive Surge Peak On-State Current
(Full Cycle, Tj Initial = 25˚C)
I2t Value for fusing
Critical rate of rise of on-state current
IG=2 x IGT, tr<100 ns, Tj = 150˚C
Peak Gate Current @ Tj = 150˚C
Average Gate Power Dissipation @ Tj = 150˚C
Storage Temperature Range
Operating Junction Temperature Range
Isolation Voltage (CHTA Series only)
CONDITIONS
TO-220AB
TO-220AB Iso
F =50 Hz
F =60 Hz
tp = 10 ms
SYMBOL
IT(RMS)
ITSM
I2 t
RATING
12A
140A
145A
112A2s
tp = 20 µs
di/dt
IGM
PG(AV)
Tstg
Tj
VISO
100A/µs
4A
1W
-40 to +150˚C
-40 to +150˚C
2500 VRMS
A1
A2
G
TO-220AB Non-Isolated
(CHTB12)
A2
G
A1
Electrical Characteristics
IGT MAX @ VD =12 V, RL = 30NOTE 1
VGT MAX @ VD =12 V, RL = 30
VGD MIN @ VD =VDRM, RL = 3.3k
Tj = 150˚C
IH MAX @ IT = 100 mA NOTE 2
IL MAX @ IG = 1.2 IGT
IL MAX @ IG = 1.2 IGT
dv/dt MIN @ VD = 67%VDRM (gate open) NOTE 2 Tj = 150˚C
(di/dt)c MIN without snubber NOTES 2 & 4
Tj = 150˚C
QI-II-III
QI-II-III
QI-II-III
QI-III
Q-II
35mA
1.3V
0.15V
35mA
50mA
80mA
300V/µs
12A/ms
ISO9001 Certified
Static Characteristics
VT MAX @ ITM =17 A, tp = 380µs NOTE 2
Vto MAX @ Threshold Voltage NOTE 2
Rd MAX @ Dynamic Resistance NOTE 2
IDRM MAX @ VDRM = VRRM
IRRM MAX @ VDRM = VRRM
Tj = 25˚C
Tj = 150˚C
Tj = 150˚C
Tj = 25˚C
Tj = 150˚C
GENERAL NOTES
1. Minimum IGT is guaranted at 5% of IGT max.
2. For both polarities of A2 referenced to A1
3. All parameters at 25 degrees C unless otherwise specified.
4. Commutating dv/dt = 50V/µs, (exponential to 200Vpk)
1.5V
0.8V
25m
5µA
5.5mA

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