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Numéro de référence | IRGMIC50U | ||
Description | Ultra Fast Speed IGBT | ||
Fabricant | International Rectifier | ||
Logo | |||
www.DataSheet4U.com
PD -90813A
IRGMIC50U
INSULATED GATE BIPOLAR TRANSISTOR
WITH ON-BOARD REVERSE DIODE
Ultra Fast Speed IGBT
Features
C
• Electrically Isolated and Hermetically Sealed
• Simple Drive Requirements
• Latch-proof
• Ultra Fast operation > 10 kHz
• Switching-loss rating includes all "tail" losses
G
E
Description
n-channel
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at the
same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, high-current
applications.
VCES = 600V
VCE(on) max = 3.0V
@VGE = 15V, IC = 27A
The performance of various IGBTs varies greatly with frequency. Note that IR now
provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "),
as well as an indication of the current handling capability
of the device.
Absolute Maximum Ratings
TO-259AA
Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current ➀
Clamped Inductive Load Current ➁
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Lead Temperature
600
45*
27
220
180
±20
200
80
-55 to + 150
300 (0.063in./1.6mm from case for 10s)
V
A
V
W
°C
Weight
10.5 (typical)
g
*Current is limited by pin diameter
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
RthJC
RthJC
Junction-to-Case-IGBT
Junction-to-Case-Diode
RthCS
RthJA
Case-to-Sink
Junction-to-Ambient
For footnotes refer to the last page
www.irf.com
— — 0.625
— — 1.0 °C/W
— 0.21 —
— — 30
1
02/20/02
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Pages | Pages 2 | ||
Télécharger | [ IRGMIC50U ] |
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