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PDF IRF3709ZSLPBF Data sheet ( Hoja de datos )
| Número de pieza | IRF3709ZSLPBF | |
| Descripción | (IRF3709xPbF) HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l Lead-Free
PD -95465
IRF3709ZPbF
IRF3709ZSPbF
IRF3709ZLPbF
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
30V 6.3m: 17nC
Benefits
l Low RDS(on) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRF3709Z
D2Pak
IRF3709ZS
TO-262
IRF3709ZL
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
iRθJC
Junction-to-Case
gRθJA Junction-to-Ambient (PCB Mount)
Max.
30
± 20
87h
62h
350
79
40
0.53
-55 to + 175
300 (1.6mm from case)
y y10 lbf in (1.1N m)
Typ.
–––
–––
Max.
1.89
40
Units
V
A
W
W/°C
°C
Units
°C/W
Notes through are on page 12
www.irf.com
1
6/30/04
1 page  
IRF3709Z/S/LPbF
90
80
70
60
50
40
30
20
10
0
25
Limited By Package
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current vs.
Case Temperature
2.5
2.0
1.5
ID = 250µA
1.0
0.5
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
10
1 D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
τCτ
Ri (°C/W) τi (sec)
0.832 0.000221
1.058 0.001171
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
5 Page 
TO-262 Package Outline
IRF3709Z/S/LPbF
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
TO-262 Part Marking Information
EXAMPLE: T HIS IS AN IRL3103L
LOT CODE 1789
AS S EMBLED ON WW 19, 1997
IN T HE AS S EMBLY LINE "C"
Note: "P" in as s embly line
pos ition indicates "Lead-Free"
INT ERNAT IONAL
RE CT IF IE R
L OGO
AS S EMBLY
LOT CODE
OR
INT ERNATIONAL
RE CT IF IE R
LOGO
AS S EMBLY
LOT CODE
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PART NUMBER
DAT E CODE
YEAR 7 = 1997
WEEK 19
LINE C
PART NUMBER
DATE CODE
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
YEAR 7 = 1997
WEEK 19
A = AS S EMBLY S IT E CODE
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IRF3709ZSLPBF.PDF ] | |
Hoja de datos destacado
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| IRF3709ZSLPBF | (IRF3709xPbF) HEXFET Power MOSFET | International Rectifier |
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