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PDF PDTA143E Data sheet ( Hoja de datos )
| Número de pieza | PDTA143E | |
| Descripción | PNP resistor-equipped transistors | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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DISCRETE SEMICONDUCTORS
DATA SHEET
PDTA143E series
PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩ
Product specification
Supersedes data of 2003 Sep 08
2004 Aug 04
1 page  
Philips Semiconductors
PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩ
Product specification
PDTA143E series
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
ICEO
IEBO
hFE
VCEsat
Vi(off)
Vi(on)
R1
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
VCB = −50 V; IE = 0
VCE = −30 V; IB = 0
VCE = −30 V; IB = 0; Tj = 150 °C
VEB = −5 V; IC = 0
VCE = −5 V; IC = −10 mA
IC = −10 mA; IB = −0.5 mA
IC = −100 µA; VCE = −5 V
IC = −20 mA; VCE = −0.3 V
−
−
−
−
30
−
−
−2.5
3.3
−
−
−
−
−
−
−1.1
−1.9
4.7
−100
−1
−50
−0.9
−
−150
−0.5
−
6.1
nA
µA
µA
mA
mV
V
V
kΩ
RR-----21-- resistor ratio
0.8 1
1.2
Cc collector capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz − − 3 pF
2004 Aug 04
5
5 Page 
Philips Semiconductors
PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩ
Plastic surface mounted package; 3 leads
Product specification
PDTA143E series
SOT490
DB
E AX
HE v M A
3
1
e1 bp
e
2
wM B
A
detail X
Lp
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
bp
c
D
E
e e1 HE Lp v
mm
0.8 0.33 0.2
0.6 0.23 0.1
1.7 0.95
1.5 0.75
1.0
0.5
1.7
1.5
0.5
0.3
0.1
w
0.1
OUTLINE
VERSION
SOT490
IEC
REFERENCES
JEDEC
EIAJ
SC-89
EUROPEAN
PROJECTION
ISSUE DATE
98-10-23
2004 Aug 04
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet PDTA143E.PDF ] | |
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