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NXP Semiconductors - NPN low VCEsat (BISS) transistor

Numéro de référence PBSS4420D
Description NPN low VCEsat (BISS) transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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PBSS4420D fiche technique
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PBSS4420D
20 V, 4 A NPN low VCEsat (BISS) transistor
Rev. 01 — 21 April 2005
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD
plastic package.
PNP complement: PBSS5420D.
1.2 Features
s Very low collector-emitter saturation resistance
s Ultra low collector-emitter saturation voltage
s 4 A continuous collector current
s Up to 15 A peak current
s High efficiency due to less heat generation
1.3 Applications
s Power management functions
s Charging circuits
s DC-to-DC conversion
s MOSFET gate driving
s Power switches (e.g. motors, fans)
s Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1:
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current (DC)
peak collector current
collector-emitter saturation
resistance
single pulse;
tp 1 ms
IC = 4 A;
IB = 400 mA
Min Typ Max
- - 20
[1] - - 4
- - 15
[2] -
50 70
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[2] Pulse test: tp 300 µs; δ ≤ 0.02.
Unit
V
A
A
m

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