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NXP Semiconductors - PNP low VCEsat (BISS) transistor

Numéro de référence PBSS3515E
Description PNP low VCEsat (BISS) transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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PBSS3515E fiche technique
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PBSS3515E
15 V, 0.5 A PNP low VCEsat (BISS) transistor
Rev. 01 — 18 April 2005
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD
plastic package.
NPN complement: PBSS2515E.
1.2 Features
s Low collector-emitter saturation voltage VCEsat
s High collector current capability: IC and ICM
s High collector current gain (hFE) at high IC
s High efficiency due to less heat generation
s Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
s DC-to-DC conversion
s MOSFET gate driving
s Motor control
s Charging circuits
s Low power switches (e.g. motors, fans)
s Portable applications
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
VCEO
IC
ICM
collector-emitter voltage
collector current (DC)
peak collector current
RCEsat collector-emitter
saturation resistance
[1] Pulse test: tp 300 µs; δ ≤ 0.02.
Conditions
open base
single pulse;
tp 1 ms
IC = 500 mA;
IB = 50 mA
Min Typ Max
- - 15
- - 0.5
- - 1
[1] -
300 500
Unit
V
A
A
m

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