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NXP Semiconductors - PNP low VCEsat (BISS) transistor

Numéro de référence PBSS306PZ
Description PNP low VCEsat (BISS) transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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PBSS306PZ fiche technique
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PBSS306PZ
100 V, 4.1 A PNP low VCEsat (BISS) transistor
Rev. 01 — 20 September 2006
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS306NZ.
1.2 Features
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I High efficiency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I High-voltage DC-to-DC conversion
I High-voltage MOSFET gate driving
I High-voltage motor control
I High-voltage power switches (e.g. motors, fans)
I Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VCEO
IC
ICM
RCEsat
collector-emitter voltage
collector current
peak collector current
collector-emitter saturation
resistance
open base
single pulse;
tp 1 ms
IC = 4 A;
IB = 400 mA
-
-
-
[1] -
- 100 V
- 4.1 A
- 8.2 A
56 80 m
[1] Pulse test: tp 300 µs; δ ≤ 0.02.

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