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PDF BLS2933-100 Data sheet ( Hoja de datos )
| Número de pieza | BLS2933-100 | |
| Descripción | Microwave power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
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BLS2933-100
Microwave power LDMOS transistor
Rev. 01 — 1 August 2006
Product data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor (at a supply voltage of 32 V) for S-band radar applications
in the 2.9 GHz to 3.3 GHz frequency range.
Table 1: Typical performance
tp = 200 µs; δ = 12 %; Tcase = 25 °C; in a class-AB production test circuit.
Mode of operation
f
VDS PL Gp
(GHz)
(V) (W) (dB)
class AB
2.9 to 3.3 32
100 8
ηD
(%)
40
IDq
(mA)
20
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I Excellent thermal stability
I Designed for broadband operation (2.9 GHz to 3.3 GHz)
I Internally matched for ease of use
1.3 Applications
I S-band radar applications
1 page  
Philips Semiconductors
BLS2933-100
Microwave power LDMOS transistor
10
Gp
(dB)
8
6
001aaf066 50
ηD
(%)
ηD 40
Gp
30
10
Gp
(dB)
8
6
001aaf070
(1)
(2)
(3)
(4)
(5)
4 20 4
2 10 2
00
2.8 3.0 3.2 3.4
f (GHz)
0
0 40 80 120 160
PL (W)
VDS = 32 V; IDq = 20 mA; tp = 200 µs; δ = 12 %;
PL = 100 W.
Fig 2. Power gain and drain efficiency as functions of
frequency; typical values
(1) f = 2.9 MHz.
(2) f = 3.0 MHz.
(3) f = 3.1 MHz.
(4) f = 3.2 MHz.
(5) f = 3.3 MHz.
VDS = 32 V; IDq = 20 mA; tp = 200 µs; δ = 12 %.
Fig 3. Power gain as a function of load power; typical
values
50
ηD
(%)
40
(1)
(2)
(3)
(4)
(5)
001aaf071
160
PL
(W)
120
001aaf072
(1) (2) (3) (4) (5)
30
80
20
40
10
0
0 40 80 120 160
PL (W)
(1) f = 2.9 MHz.
(2) f = 3.0 MHz.
(3) f = 3.1 MHz.
(4) f = 3.2 MHz.
(5) f = 3.3 MHz.
VDS = 32 V; IDq = 20 mA; tp = 200 µs; δ = 12 %.
Fig 4. Efficiency as a function of power load; typical
values
0
0 10 20 30
Pi (W)
(1) f = 2.9 MHz.
(2) f = 3.0 MHz.
(3) f = 3.1 MHz.
(4) f = 3.2 MHz.
(5) f = 3.3 MHz.
VDS = 32 V; IDq = 20 mA; tp = 200 µs; δ = 12 %.
Fig 5. Load power as a function of input power;
typical values
BLS2933-100_1
Product data sheet
Rev. 01 — 1 August 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
5 of 12
5 Page 
Philips Semiconductors
BLS2933-100
Microwave power LDMOS transistor
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Objective [short] data sheet Development
Preliminary [short] data sheet Qualification
Product [short] data sheet
Production
Definition
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.semiconductors.philips.com.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Philips Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Philips Semiconductors
sales office. In case of any inconsistency or conflict with the short data sheet,
the full data sheet shall prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, Philips Semiconductors does not give any representations
or warranties, expressed or implied, as to the accuracy or completeness of
such information and shall have no liability for the consequences of use of
such information.
Right to make changes — Philips Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — Philips Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a Philips Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Philips Semiconductors accepts no liability for inclusion and/or use
of Philips Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Philips Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and and
operation of the device at these or any other conditions above those given in
the Characteristics sections of this document is not implied. Exposure to
limiting values for extended periods may affect device reliability.
Terms and conditions of sale — Philips Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.semiconductors.philips.com/profile/terms, including those
pertaining to warranty, intellectual property rights infringement and limitation
of liability, unless explicitly otherwise agreed to in writing by Philips
Semiconductors. In case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
BLS2933-100_1
Product data sheet
Rev. 01 — 1 August 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
11 of 12
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