DataSheet.es    


PDF BLF4G20LS-110B Data sheet ( Hoja de datos )

Número de pieza BLF4G20LS-110B
Descripción UHF power LDMOS transistor
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



Hay una vista previa y un enlace de descarga de BLF4G20LS-110B (archivo pdf) en la parte inferior de esta página.


Total 12 Páginas

No Preview Available ! BLF4G20LS-110B Hoja de datos, Descripción, Manual

www.DataSheet4U.com
BLF4G20LS-110B
UHF power LDMOS transistor
Rev. 01 — 10 January 2006
Product data sheet
1. Product profile
1.1 General description
110 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1: Typical performance
f = 1930 MHz to 1990 MHz; Tcase = 25 °C; IDq = 650 mA; unless otherwise specified; in a class-AB
production test circuit; typical values
Mode of operation
VDS
PL
(V) (W)
Gp ηD ACPR400 ACPR600 EVMrms
(dB) (%) (dBc)
(dBc)
(%)
CW
28 100
13.4 49 -
-
-
GSM EDGE
28 48 (AV) 13.8 38.5 61 [1]
74 [2]
2.1
[1] ACPR400 at 30 kHz resolution bandwidth.
[2] ACPR600 at 30 kHz resolution bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s Typical GSM EDGE performance at a frequency of 1930 MHz and 1990 MHz, a
supply voltage of 28 V and an IDq of 650 mA:
x Load power = 48 W (AV)
x Gain = 13.8 dB (typ)
x Efficiency = 38.5 % (typ)
x ACPR400 = 61 dBc (typ)
x ACPR600 = 74 dBc (typ)
x EVMrms = 2.1 % (typ)
s Easy power control
s Excellent ruggedness
s High efficiency
s Excellent thermal stability
s Designed for broadband operation (1800 MHz to 2000 MHz)
s Internally matched for ease of use

1 page




BLF4G20LS-110B pdf
Philips Semiconductors
BLF4G20LS-110B
UHF power LDMOS transistor
15
Gp
(dB)
14
13
12
11
Gp
ηD
001aac391
50
ηD
(%)
40
30
20
10
50
ACPR
(dBc)
60
70
80
ACPR400
ACPR600
001aac392
10
0
0
20 40 60 80
PL(AV) (W)
90
0
20 40 60 80
PL(AV) (W)
VDS = 28 V; IDq = 650 mA; Tcase = 25 °C;
f = 1990 MHz
Fig 5. GSM EDGE power gain and drain efficiency as
functions of average load power; typical values
VDS = 28 V; IDq = 650 mA; Tcase = 25 °C;
f = 1990 MHz
Fig 6. GSM EDGE ACPR at 400 kHz and at 600 kHz as
a function of average load power; typical values
12
EVM
(%)
8
001aac393
EVMM
56
ACPR
(dBc)
60
001aac394
4
EVM
(%)
3
64 2
ACPR 400
4
EVMrms
68
EVMrms
1
0
0 20 40 60 80
PL(AV) (W)
72
0
0
10 20 30 40 50
ηD (%)
VDS = 28 V; IDq = 650 mA; Tcase = 25 °C;
f = 1990 MHz
Fig 7. GSM EDGE rms EVM and peak EVM as
functions of average load power; typical values
VDS = 28 V; IDq = 650 mA; Tcase = 25 °C;
f = 1990 MHz
Fig 8. GSM EDGE ACPR at 400 kHz and rms EVM as
functions of drain efficiency; typical values
9397 750 14548
Product data sheet
Rev. 01 — 10 January 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
5 of 12

5 Page





BLF4G20LS-110B arduino
Philips Semiconductors
BLF4G20LS-110B
UHF power LDMOS transistor
12. Data sheet status
Level Data sheet status [1] Product status [2] [3]
I Objective data
Development
II Preliminary data
Qualification
III Product data
Production
Definition
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
13. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
makes no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
14. Disclaimers
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
15. Trademarks
Notice — All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
16. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
9397 750 14548
Product data sheet
Rev. 01 — 10 January 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
11 of 12

11 Page







PáginasTotal 12 Páginas
PDF Descargar[ Datasheet BLF4G20LS-110B.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
BLF4G20LS-110BUHF power LDMOS transistorNXP Semiconductors
NXP Semiconductors

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar