DataSheetWiki


NTGD3133P fiches techniques PDF

ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence NTGD3133P
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
Logo ON Semiconductor 





1 Page

No Preview Available !





NTGD3133P fiche technique
www.DataSheet4U.com
NTGD3133P
Power MOSFET
−20 V, −2.5 A, P−Channel, TSOP−6 Dual
Features
Reduced Gate Charge for Fast Switching
−2.5 V Gate Rating
Leading Edge Trench Technology for Low On Resistance
Independent Devices to Provide Design Flexibility
This is a Pb−Free Device
Applications
Li−Ion Battery Charging
Load Switch / Power Switching
DC to DC Conversion
Portable Devices like PDA’s, Cellular Phones, and Hard Drives
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
t5s
Steady
State
Continuous Drain
Current (Note 2)
t5s
Steady
State
Power Dissipation
(Note 2)
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
VDSS
VGS
ID
PD
ID
PD
−20
±12
−2.3
−1.6
−2.5
1.1
1.3
−1.6
−1.2
0.56
V
V
A
W
A
W
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
IDM
TJ, TSTG
±7.0
−55 to
150
A
°C
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IS −0.8 A
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 0
1
http://onsemi.com
V(BR)DSS
−20 V
RDS(on) MAX
145 mW @ −4.5 V
200 mW @ −2.5 V
ID MAX
−2.5 A
S1
G1
S2
G2
D1 D2
P−CHANNEL MOSFET P−CHANNEL MOSFET
MARKING
DIAGRAM
1
TSOP6
CASE 318G
SC MG
G
SC = Specific Device Code 1
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTION
G1 1
S2 2
G2 3
6 D1
5 S1
4 D2
(Top View)
ORDERING INFORMATION
Device
Package
Shipping
NTGD3133PT1G TSOP6 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTGD3133P/D

PagesPages 5
Télécharger [ NTGD3133P ]


Fiche technique recommandé

No Description détaillée Fabricant
NTGD3133P Power MOSFET ( Transistor ) ON Semiconductor
ON Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche