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NTD4813NH Datasheet دیتاشیت PDF دانلود

دیتاشیت - ON Semiconductor - Power MOSFET

شماره قطعه NTD4813NH
شرح مفصل Power MOSFET
تولید کننده ON Semiconductor 
آرم ON Semiconductor 


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NTD4813NH شرح
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NTD4813NH
Power MOSFET
30 V, 40 A, Single N−Channel, DPAK/IPAK
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Low RG
These are Pb−Free Devices
Applications
CPU Power Delivery
DC−DC Converters
High Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA
(Note 1)
VDSS 30 V
VGS ±20 V
TA = 25°C
ID
9.0 A
TA = 85°C
7.0
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA
(Note 2)
Power Dissipation
RqJA (Note 2)
Continuous Drain
Current RqJC
(Note 1)
TA = 25°C
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TC = 25°C
TC = 85°C
PD
ID
PD
ID
1.94 W
7.6 A
5.9
1.27 W
40 A
31
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
TC = 25°C
tp=10ms TA = 25°C
PD
IDM
35.3 W
90 A
Current Limited by Package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
IDmaxPkg
TJ,
TSTG
IS
dV/dt
35
−55 to
+175
29
6
A
°C
A
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 24 V, VGS = 10 V,
IL = 17.2 Apk, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
44.4 mJ
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
13 mW @ 10 V
25.9 mW @ 4.5 V
ID MAX
40 A
D
G
S
N−CHANNEL MOSFET
4
4
4
12
3
DPAK
CASE 369C
(Bent Lead)
STYLE 2
1 23
1
2
3
3 IPAK
IPAK
CASE 369AC CASE 369D
(Straight Lead) (Straight Lead
DPAK)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
4
Drain
2
1 Drain 3
Gate Source
1 23
Gate Drain Source
1
23
Gate Drain Source
Y = Year
WW = Work Week
4813NH = Device Code
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
December, 2006 − Rev. 0
1
Publication Order Number:
NTD4813NH/D

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